Short-channel like effects in Schottky barrier carbon nanotube field-effect transistors

被引：0

作者：

Appenzeller, J ^{[1
]}

Knoch, J ^{[1
]}

Martel, R ^{[1
]}

Derycke, V ^{[1
]}

Wind, S ^{[1
]}

Avouris, P ^{[1
]}

机构：

[1] IBM Corp, Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA

来源：

INTERNATIONAL ELECTRON DEVICES 2002 MEETING, TECHNICAL DIGEST | 2002年

关键词：

D O I：

暂无

中图分类号：

TP3 [计算技术、计算机技术];

学科分类号：

0812 ;

摘要：

This study shows new results on vertically scaled carbon nanotube field-effect transistors (CNFETs) focusing in particular on short-channel effects. We show clear evidence that state-of-the-art CNFETs behave as Schottky barrier (SB) transistors and that SB-CNFETs exhibit a very distinct scaling behavior. The relevant scaling rules that have to be applied to ensure the desired device operation and to avoid short-channel-like effects of CNFETs are discussed for the first time.

引用

页码：285 / 288

页数：4

共 12 条

[1] Field-modulated carrier transport in carbon nanotube transistors
Appenzeller, J
Knoch, J
Derycke, V
Martel, R
Wind, S
Avouris, P
[J]. PHYSICAL REVIEW LETTERS, 2002, 89 (12) : 126801 - 126801
[2] Logic circuits with carbon nanotube transistors
Bachtold, A
Hadley, P
Nakanishi, T
Dekker, C
[J]. SCIENCE, 2001, 294 (5545) : 1317 - 1320
[3] Dresselhaus MS, 2001, CARBON NANOTUBES
[4] Complementary silicide source/drain thin-body MOSFETs for the 20nm gate length regime
Kedzierski, J
Xuan, PQ
Anderson, EH
Bokor, J
King, TJ
Hu, CM
[J]. INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, : 57 - 60
[5] Single- and multi-wall carbon nanotube field-effect transistors
Martel, R
Schmidt, T
Shea, HR
Hertel, T
Avouris, P
[J]. APPLIED PHYSICS LETTERS, 1998, 73 (17) : 2447 - 2449
[6] Ambipolar electrical transport in semiconducting single-wall carbon nanotubes
Martel, R
Derycke, V
Lavoie, C
Appenzeller, J
Chan, KK
Tersoff, J
Avouris, P
[J]. PHYSICAL REVIEW LETTERS, 2001, 87 (25) : 256805 - 1
[7] MARTEL R, 2001, IEDM, P159
[8] RADOSAVLJEVIC M, 2001, THESIS U PENNSYLVANI, P53
[9] Room-temperature transistor based on a single carbon nanotube
Tans, SJ
Verschueren, ARM
Dekker, C
[J]. NATURE, 1998, 393 (6680) : 49 - 52
[10] Crystalline ropes of metallic carbon nanotubes
Thess, A
Lee, R
Nikolaev, P
Dai, HJ
Petit, P
Robert, J
Xu, CH
Lee, YH
Kim, SG
Rinzler, AG
Colbert, DT
Scuseria, GE
Tomanek, D
Fischer, JE
Smalley, RE
[J]. SCIENCE, 1996, 273 (5274) : 483 - 487

← 1 2 →