High-performance strain-compensated InGaAs-GaAsP-GaAs (λ=1.17 μm) quantum-well diode lasers

被引：80

作者：

Tansu, N ^{[1
]}

Mawst, LJ ^{[1
]}

机构：

[1] Univ Wisconsin, Dept Elect Comp Engn, Madison, WI 53706 USA

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 2001年 / 13卷 / 03期

关键词：

diode lasers; epitaxial growth; InGaAs-GaAs quantum well; long-wavelength lasers; quantum-well lasers; semiconductor growth; semiconductor lasers; strain;

D O I：

10.1109/68.914313

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports studies on highly strained and strain-compensated InGaAs quantum-well (QW) active diode lasers on GaAs substrates, fabricated by low-temperature (550 degreesC) metal-organic chemical vapor deposition (MOCVD) growth. Strain compensation of the (compressively strained) InCaAs QW is investigated by using either InGaP (tensile-strained) cladding layer or GaAsP (tensile-strained) barrier layers, High-performance lambda = 1.165 mum laser emission is achieved from InGaAs-GaAsP strain-compensated QW laser structures, with threshold current densities of 65 A/cm(2) for 1500-mum-cavity devices and transparency current densities of 50 A/cm(2). The use of GaAsP-barrier layers are also shown to significantly improve the internal quantum efficiency of the highly strained InCaAs-active laser structure. As a result, external differential quantum efficiencies of 56% are achieved for 500-mum-cavity length diode lasers.

引用

页码：179 / 181

页数：3

共 14 条

[1] 14.3 W quasicontinuous wave front-facet power from broad-waveguide Al-free 970 nm diode lasers [J].

AlMuhanna, A ;

Mawst, LJ ;

Botez, D ;

Garbuzov, DZ ;

Martinelli, RU ;

Connolly, JC .

APPLIED PHYSICS LETTERS, 1997, 71 (09) :1142-1144

[2] Temperature-insensitive operation of real index guided 1.06 μm InGaAs GaAsP strain-compensated single-quantum-well laser diodes [J].

Asano, H ;

Wada, M ;

Fukunaga, T ;

Hayakawa, T .

APPLIED PHYSICS LETTERS, 1999, 74 (21) :3090-3092

[3]

CHEN ZB, 1999, P APCC OECC 99 BEIJ, V2, P1311

[4] 1.2-μm GaAsP/InGaAs strain compensated single-quantum-well diode laser on GaAs using metal-organic chemical vapor deposition [J].

Choi, WJ ;

Dapkus, D ;

Jewell, JJ .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (12) :1572-1574

[5] 1.3 μm room-temperature GaAs-based quantum-dot laser [J].

Huffaker, DL ;

Park, G ;

Zou, Z ;

Shchekin, OB ;

Deppe, DG .

APPLIED PHYSICS LETTERS, 1998, 73 (18) :2564-2566

[6] 1.2μm highly strained GaInAs/GaAs quantum well lasers for singlemode fibre datalink [J].

Koyama, F ;

Schlenker, D ;

Miyamoto, T ;

Chen, Z ;

Matsutani, A ;

Sakaguchi, T ;

Iga, K .

ELECTRONICS LETTERS, 1999, 35 (13) :1079-1081

[7] Effect of GaAsyP1-y(0≤y<1) interlayers on the structural, optical, and electrical characteristics of GaAs/InGaP heterojunction [J].

Kwon, YH ;

Jeong, WG ;

Cho, YH ;

Choe, BD .

APPLIED PHYSICS LETTERS, 2000, 76 (17) :2379-2381

[8] HIGH-POWER HIGHLY-RELIABLE OPERATION OF 0.98-MU-M INGAAS-INGAP STRAIN-COMPENSATED SINGLE-QUANTUM-WELL LASERS WITH TENSILE-STRAINED INGAASP BARRIERS [J].

SAGAWA, M ;

TOYONAKA, T ;

HIRAMOTO, K ;

SHINODA, K ;

UOMI, K .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1995, 1 (02) :189-195

[9] Room-temperature continuous-wave operation of 1.24-μm GaInNAs lasers grown by metal-organic chemical vapor deposition [J].

Sato, S ;

Satoh, S .

IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 1999, 5 (03) :707-710

[10] 1.17-μm highly strained GaInAs-GaAs quantum-well laser [J].

Schlenker, D ;

Miyamoto, T ;

Chen, Z ;

Koyama, F ;

Iga, K .

IEEE PHOTONICS TECHNOLOGY LETTERS, 1999, 11 (08) :946-948

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