Epitaxial integration of ferromagnetic correlated oxide LaCoO3 with Si (100)

被引：61

作者：

Posadas, A. ^{[1
]}

Berg, M. ^{[1
]}

Seo, H. ^{[1
]}

de Lozanne, A. ^{[1
]}

Demkov, A. A. ^{[1
]}

Smith, D. J. ^{[2
]}

Kirk, A. P. ^{[3
]}

Zhernokletov, D. ^{[3
]}

Wallace, R. M. ^{[3
]}

机构：

[1] Univ Texas Austin, Dept Phys, Austin, TX 78712 USA

[2] Arizona State Univ, Dept Phys, Tempe, AZ 85287 USA

[3] Univ Texas Dallas, Dept Mat Sci & Engn, Richardson, TX 75080 USA

来源：

APPLIED PHYSICS LETTERS | 2011年 / 98卷 / 05期

基金：

美国国家科学基金会;

关键词：

SPIN; TRANSITION; FILMS;

D O I：

10.1063/1.3549301

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have grown epitaxial strained LaCoO3 on (100)-oriented silicon by molecular beam epitaxy using a relaxed epitaxial SrTiO3 buffer layer. Superconducting quantum interference device magnetization measurements show that, unlike the bulk material, the ground state of the strained LaCoO3 on silicon is ferromagnetic with a T-C of 85 K. First principles calculations suggest that a ferromagnetic ground state can be stabilized in LaCoO3 by a sufficiently large biaxial tensile strain with the transition accompanied by a partial untilting of the CoO6 octahedra. (C) 2011 American Institute of Physics. [doi:10.1063/1.3549301]

引用

页数：3

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