38 GHz low phase noise CPW monolithic VCO's implemented in manufacturable AlInAs/InGaAs HBT IC technology

被引:11
作者
Kurdoghlian, A [1 ]
Sokolich, M [1 ]
Case, M [1 ]
Micovic, M [1 ]
Thomas, S [1 ]
Fields, CH [1 ]
机构
[1] Hughes Res Labs, LLC, Malibu, CA 90265 USA
来源
GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000 | 2000年
关键词
D O I
10.1109/GAAS.2000.906301
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We have demonstrated a 38 GHz voltage controlled oscillator (VCO) with an integrated buffer amplifier in AlInAs/InGaAs HBT technology. Co-planar waveguide (CPW) circuit designs has been employed for the development of the InP HBT MMIC VCOs to reduce chip cost and make them flip chip compatible. The VCO was realized in a high yield optical lithography triple mesa HBT process. This VCO delivers a typical output power of 10 dBm at a center frequency of 38.4 GHz with a tuning range of up to 850 MHz. The measured phase noise shows -82 dBc/Hz at 100khz offset and -108 dBc/Hz at 1MHz offset. Uniformity and reproducibility were also demonstrated. Circuit performance was relatively insensitive to process variation indicating a highly robust and manufacturable circuit design and process.
引用
收藏
页码:99 / 102
页数:4
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