共 50 条
- [1] A low power 52.9 GHz static divider implemented in a manufacturable 180 GHz AlInAs/InGaAs HBT IC technology GAAS IC SYMPOSIUM - 20TH ANNUAL, TECHNICAL DIGEST 1998, 1998, : 117 - 120
- [2] A low power 72.8 GHz static frequency divider implemented in AlInAs/InGaAs HBT IC technology GAAS IC SYMPOSIUM - 22ND ANNUAL, TECHNICAL DIGEST 2000, 2000, : 81 - 84
- [3] 40 GHz fully integrated and differential monolithic VCO with wide tuning range in AlInAs/InGaAs HBT GAAS IC SYMPOSIUM, TECHNICAL DIGEST 2001, 2001, : 129 - 132
- [4] A 52 GHz VCO with low phase noise implemented in SiGeBiCMOS technology 3RD IEEE INTERNATIONAL WORKSHOP ON SYSTEM-ON-CHIP FOR REAL-TIME APPLICATIONS, PROCEEDINGS, 2003, : 264 - 269
- [6] Low phase-noise monolithic GaInP/GaAs-HBT VCO for 77 GHz 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2003, : 903 - 906
- [9] Low phase noise, fully integrated monolithic VCO in X band based on HBT technology 2001 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, 2001, : 1415 - 1418