Switching control of resistive switching devices

被引:24
作者
Chen, An [1 ]
机构
[1] GLOBALFOUNDRIES, Strateg Technol Grp, Sunnyvale, CA 94088 USA
关键词
FILMS; OXIDE;
D O I
10.1063/1.3532969
中图分类号
O59 [应用物理学];
学科分类号
摘要
Switching current control plays a critical role in the operation of resistive switching devices. Both on-state resistance and maximum reset current show strong dependence on the current limit during set switching. The dependence in unipolar switching devices can be explained by the power-driven nature of reset and dynamic competition between set and reset forces. Effective switching control improves device characteristics including uniform resistance distribution and low reset current. However, it also presents challenges for the choice of selection devices and the feasibility of unconventional architectures for resistive switching devices. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532969]
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页数:3
相关论文
共 19 条
[1]   Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses [J].
Baek, IG ;
Lee, MS ;
Seo, S ;
Lee, MJ ;
Seo, DH ;
Suh, DS ;
Park, JC ;
Park, SO ;
Kim, HS ;
Yoo, IK ;
Chung, UI ;
Moon, JT .
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST, 2004, :587-590
[2]   Reproducible switching effect in thin oxide films for memory applications [J].
Beck, A ;
Bednorz, JG ;
Gerber, C ;
Rossel, C ;
Widmer, D .
APPLIED PHYSICS LETTERS, 2000, 77 (01) :139-141
[3]   Erasing characteristics of Cu2O metal-insulator-metal resistive switching memory [J].
Chen, A. ;
Haddad, S. ;
Wu, Y. C. ;
Fang, T. N. ;
Kaza, S. ;
Lan, Z. .
APPLIED PHYSICS LETTERS, 2008, 92 (01)
[4]  
Chen A, 2005, INT EL DEVICES MEET, P765
[5]   Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition -: art. no. 033715 [J].
Choi, BJ ;
Jeong, DS ;
Kim, SK ;
Rohde, C ;
Choi, S ;
Oh, JH ;
Kim, HJ ;
Hwang, CS ;
Szot, K ;
Waser, R ;
Reichenberg, B ;
Tiedke, S .
JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)
[6]  
Fang T.-N., 2006, IEDM
[7]   Parasitic reset in the programming transient of PCMs [J].
Ielmini, D ;
Mantegazza, D ;
Lacaita, AL ;
Pirovano, A ;
Pellizzer, F .
IEEE ELECTRON DEVICE LETTERS, 2005, 26 (11) :799-801
[8]   Resistance transition in metal oxides induced by electronic threshold switching [J].
Ielmini, D. ;
Cagli, C. ;
Nardi, F. .
APPLIED PHYSICS LETTERS, 2009, 94 (06)
[9]  
Jeong DS, 2005, APPL PHYS LETT, V86, DOI [10.1063/1.1968416, 10.1063/1.1865326]
[10]   Reduction in the reset current in a resistive random access memory consisting of NiOx brought about by reducing a parasitic capacitance [J].
Kinoshita, K. ;
Tsunoda, K. ;
Sato, Y. ;
Noshiro, H. ;
Yagaki, S. ;
Aoki, M. ;
Sugiyama, Y. .
APPLIED PHYSICS LETTERS, 2008, 93 (03)