Scanning near-field millimeter-wave microscopy using a metal slit as a scanning probe

被引:55
作者
Nozokido, T
Bae, J
Mizuno, K
机构
[1] RIKEN, Inst Phys & Chem Res, Photodynam Res Ctr, Sendai, Miyagi 9800868, Japan
[2] Tohoku Univ, Elect Commun Res Inst, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
关键词
free carriers; millimeter-wave; scanning nearfield microscopy; slit-type probe; visualization;
D O I
10.1109/22.910553
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, a novel type of scanning near-field millimeter-wave microscopy using a metal slit-type probe is proposed. A tapered reduced-height rectangular waveguide forms the slit aperture, which has a,width much smaller than one wavelength lambda and length of the order of lambda, The slit probe can be operated in the TE10 mode and, thus, results in high transmission efficiency, even when the width is exceedingly small, An image reconstruction algorithm based on computerized tomographic imaging is used to obtain two-dimensional near-field images, Experiments performed at 60 GHz (lambda = 5 mm) show that image resolution equal to the slit width (similar to 80 mum) is achieved. As an application of this scanning slit microscopy, visualization of transition phenomena of photoexcited free carriers in a silicon have been successfully demonstrated, yielding useful information on the dynamics of free carriers in semiconductor materials.
引用
收藏
页码:491 / 499
页数:9
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