The influence of the silicon/silicon oxide space charge region on excess charge carrier kinetics in silicon

被引：1

作者：

Moreno, E. Martinez ^{[1
]}

Kunst, M. ^{[1
]}

机构：

[1] Helmholtz Zentrum Berlin Mat & Energie, D-14107 Berlin, Germany

来源：

PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS | 2011年 / 248卷 / 02期

关键词：

heterojunctions; silicon; SiO(2); surface photovoltage; time-resolved conductivity; CRYSTALLINE SILICON; SURFACE; SEMICONDUCTORS; LIFETIME; WAFERS; RECOMBINATION; PASSIVATION; INTERFACE; DECAY;

D O I：

10.1002/pssb.201046515

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Excess charge carrier kinetics in p-doped crystalline silicon (Si) wafers covered by SiO(2) films is investigated by transient photoconductance and surface photovoltage measurements. This makes it possible to distinguish between excess charge carriers collected in the Si/SiO(2) heterojunction and those in the Si volume. The decay of the photoconductance signal in the millisecond time range could be unambiguously attributed to excess charge carriers stored in the space charge region. The decay of these charge carriers appears to be independent of the volume lifetime. The difference between the behaviours in Si/SiO(2) and Si/SiN(x) is discussed. (C) 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：352 / 360

页数：9

共 18 条

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