Time relaxation of point defects in p- and n-(HgCd)Te after ion milling

被引:19
作者
Belas, E
Bogoboyashchyy, VV
Grill, R
Izhnin, II
Vlasov, AP
Yudenkov, VA
机构
[1] Charles Univ, Inst Phys, CZ-12116 Prague 2, Czech Republic
[2] Kremenchuk State Polytech Univ, UA-39614 Kremenchuk, Ukraine
[3] R&D Inst Mat SRC Carat, UA-79031 Lvov, Ukraine
[4] Lviv Natl Univ, UA-79044 Lvov, Ukraine
关键词
(HgCd)Te; type conversion; ion milling;
D O I
10.1007/s11664-003-0055-9
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Time relaxation of the electrical conductivity sigma(77 K) and Hall coefficient RH(77 K) of the n-type layer created by ion milling is investigated in Hg vacancy-doped, As-doped, and In-predoped p-type, and In-doped n-type Hg1-xCdxTe (0.2 < x < 0.22) samples. We show that the n-type layer is formed, and the temperature-activated relaxation occurs in all cases. The annealing at 75degreesC results in a gradual degradation of the converted n-type layer and a back n-to-p conversion within 8 days. The existence of a high-conducting, surface-damaged region with a high-electron density (similar to10(18) cm(-3)) and a low mobility (similar to10(3) cm(2)/Vs) is confirmed, and its influence on the relaxation is studied.
引用
收藏
页码:698 / 702
页数:5
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