Investigation on white light emissions from CeO2/Dy2O3 multilayer films based on silicon substrates

被引:4
|
作者
Li, L. [1 ]
Wang, S. W. [1 ]
Mu, G. Y. [1 ]
Yin, X. [1 ]
Wan, G. M. [1 ]
Zhang, X. W. [1 ]
Duan, W. B. [1 ]
Yi, L. X. [1 ]
机构
[1] Beijing Jiaotong Univ, Inst Optoelect Technol, Minist Educ, Key Lab Luminescence & Opt Informat, Beijing 100044, Peoples R China
基金
美国国家科学基金会;
关键词
Thin film; CeO2:Dy3+; Photoluminescence; Annealing; ENERGY-TRANSFER; DY3+; LUMINESCENCE; ELECTROLUMINESCENCE; PHOTOLUMINESCENCE; IONS; SM3+;
D O I
10.1016/j.vacuum.2014.11.005
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
CeO2/Dy2O3 multilayer films were deposited on Si substrates using electron-beam evaporation, and Dy3+ ions were doped in CeO2 after samples were annealed in weak reducing atmosphere at high temperature. White light emissions were observed from CeO2:Dy3+ films. The luminescence properties of CeO2:Dy3+ films were investigated by excitation, emission spectra and decay curves. In addition, the effects of Dy3+ concentration and annealing temperature on photoluminescence intensity were conducted. In this paper, the color coordinates of samples with different Dy3+ concentration were calculated and the results were presented in chromaticity diagram. (C) 2014 Elsevier Ltd. All rights reserved.
引用
收藏
页码:38 / 41
页数:4
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