Four-wave mixing in intersubband transitions of a semiconductor quantum well structure

被引：3
作者：
Paspalakis, Emmanuel [1 ]
Kanaki, Aggeliki [1 ]
Terzis, Andreas F. [2 ]
机构：
[1] Univ Patras, Sch Nat Sci, Dept Mat Sci, Patras 26504, Greece
[2] Univ Patras, Dept Phys, Sch Nat Sci, Patras 26504, Greece
来源：
NONLINEAR OPTICS AND APPLICATIONS II | 2007年 / 6582卷
关键词：
semiconductor quantum well; intersubband transitions; four-wave mixing; Rabi frequency; effective nonlinear Bloch equations; density matrix; electron sheet density;
D O I：
10.1117/12.722187
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We study theoretically the phenomenon of four-wave mixing in intersubband transitions of a symmetric double quantum well structure. In the theoretical model we consider two quantum well subbands that are coupled by a strong pump electromagnetic field and a weak probe electromagnetic field, taking into account the effects of electron-electron interactions. For the description of the system dynamics we use the density matrix equations obtained from the effective nonlinear Bloch equations. These equations are solved numerically for a realistic semiconductor quantum well structure GaAs/AlGaAs. We show that the four-wave mixing spectrum can be significantly dependent on the frequency and the intensity of the pump field and on electron sheet density.
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收藏
页数：9
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