Characterization of uncooled bolometer with vanadium tungsten oxide infrared active layer

被引：57

作者：

Chi-Anh, N ^{[1
]}

Shin, HJ ^{[1
]}

Kim, KT ^{[1
]}

Han, YH ^{[1
]}

Moon, S ^{[1
]}

机构：

[1] Korea Inst Sci & Technol, Microsyst Res Ctr, Seoul 136650, South Korea

来源：

SENSORS AND ACTUATORS A-PHYSICAL | 2005年 / 123-24卷

关键词：

uncooled bolometer; vanadium oxide; vanadium tungsten oxide; detectivity; micromachining;

D O I：

10.1016/j.sna.2005.04.024

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A surface micromachining uncooled infrared detector with an optimized vanadium alloy oxide layer is fabricated, based on low temperature annealing of V-W alloy oxide layer. Vanadium oxide is a promising material for an uncooled bolometer, due to its high temperature coefficient of resistance at room temperature. An infrared active layer is needed to be with the reflective layer to enhance its IR absorption. Test bolometers are successfully fabricated and then are radiated by an IR laser source at various power levels with a chopper in a frequency range of 1-500 Hz. The responsivity and the noise of the test bolometer are measured and the detectivity is calculated. From the results, the calculated detectivity is 1.1 x 10(7) cm Hz(1/2) W-1. Bolometer detectivity can be increased further if the noise in the device is reduced. (C) 2005 Elsevier B.V. All rights reserved.

引用

页码：87 / 91

页数：5

共 9 条

[1] Micromachined uncooled IR bolometer linear array using VO2 thin films [J].

Chen, CH ;

Yi, XJ ;

Zhang, J ;

Xiong, BF .

INTERNATIONAL JOURNAL OF INFRARED AND MILLIMETER WAVES, 2001, 22 (01) :53-58

[2] Thermal characterization of surface-micromachined silicon nitride membranes for thermal infrared detectors [J].

Eriksson, P ;

Andersson, JY ;

Stemme, G .

JOURNAL OF MICROELECTROMECHANICAL SYSTEMS, 1997, 6 (01) :55-61

[3] Micromachined, uncooled, VO2-based, IR bolometer-arrays [J].

Jerominek, H ;

Picard, F ;

Swart, NR ;

Renaud, M ;

Levesque, M ;

Lehoux, M ;

Castonguay, JS ;

Pelletier, M ;

Bilodeau, G ;

Audet, D ;

Pope, TD ;

Lambert, P .

INFRARED DETECTORS AND FOCAL PLANE ARRAYS IV, 1996, 2746 :60-71

[4] THIN-FILM RESISTANCE BOLOMETER IR DETECTORS [J].

LIDDIARD, KC .

INFRARED PHYSICS, 1984, 24 (01) :57-64

[5] Uncooled amorphous silicon technology enhancement for 25μm pixel pitch achievement [J].

Mottin, E ;

Bain, A ;

Martin, JL ;

Ouvrier-Buffet, JL ;

Bisotto, S ;

Yon, JJ ;

Tissot, JL .

INFRARED TECHNOLOGY AND APPLICATIONS XXV111, PTS 1 AND 2, 2003, 4820 :200-207

[6] THIN-FILM INFRARED ABSORBER STRUCTURES FOR ADVANCED THERMAL DETECTORS [J].

PARSONS, AD ;

PEDDER, DJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1686-1689

[7] Infrared focal plane array incorporating silicon IC process compatible bolometer [J].

Tanaka, A ;

Matsumoto, S ;

Tsukamoto, N ;

Itoh, S ;

Chiba, K ;

Endoh, T ;

Nakazato, A ;

Okuyama, K ;

Kumazawa, Y ;

Hijikawa, M ;

Gotoh, H ;

Tanaka, T ;

Teranishi, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1996, 43 (11) :1844-1850

[8]

Vincent JD, 1990, FUNDAMENTALS INFRARE, P10

[9] IR microbolometer with self-supporting structure operating at room temperature [J].

Wang, HC ;

Yi, XJ ;

Huang, G ;

Xiao, J ;

Li, XW ;

Chen, SH .

INFRARED PHYSICS & TECHNOLOGY, 2004, 45 (01) :53-57

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