A review of metal-semiconductor contacts for β-Ga2O3

被引：38

作者：

Lu, Chao ^{[1
,2
,4
]}

Ji, Xueqiang ^{[1
,2
]}

Liu, Zeng ^{[3
]}

Yan, Xu ^{[1
,2
]}

Lu, Nianpeng ^{[4
]}

Li, Peigang ^{[1
,2
]}

Tang, Weihua ^{[3
]}

机构：

[1] Beijing Univ Posts & Telecommun, Sch Integrated Circuits, Beijing 100876, Peoples R China

[2] Beijing Univ Posts & Telecommun, State Key Lab Informat Photon & Opt Commun, Beijing 100876, Peoples R China

[3] Nanjing Univ Posts & Telecommun, Coll Integrated Circuit Sci & Engn, Nanjing 210023, Peoples R China

[4] Chinese Acad Sci, Inst Phys, Beijing Natl Lab Condensed Matter Phys, Beijing 100190, Peoples R China

来源：

JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2022年 / 55卷 / 46期

基金：

中国国家自然科学基金;

关键词：

beta-gallium oxide (beta-Ga2O3); Ohmic contact; Schottky contact; Schottky barrier height; CAPACITANCE-VOLTAGE CHARACTERISTICS; SCHOTTKY CONTACTS; OHMIC CONTACTS; ELECTRICAL CHARACTERISTICS; SINGLE-CRYSTALS; BARRIER HEIGHT; DIODES; PERFORMANCE; PRINCIPLES; BEHAVIOR;

D O I：

10.1088/1361-6463/ac8818

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

beta-Gallium oxide (beta-Ga2O3) has been studied extensively in recent decades due to its excellent usability in fabricating a variety of devices, such as solar-blind photodetectors and power devices. However, as an important part of a device, related investigations of beta-Ga2O3-metal contacts, especially for Schottky contacts, are rare. In this review, we summarize recent research progress on beta-Ga2O3-metal contacts, including related theories, measurements, fabrication processes, control methods, etc. This review will provide insights for both theoretical understanding of the metal/semiconductor interface, as well as the fabrication process for engineering applications of Ga2O3-based devices.

引用

页数：18

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