Programmable Bipolar and Unipolar Nonvolatile Memory Devices Based on Poly(2-(N-carbazolyl)ethyl methacrylate) End-Capped with Fullerene

被引：77

作者：

Hahm, Suk Gyu ^{[3
,4
]}

Kang, Nam-Goo ^{[1
,2
]}

Kwon, Wonsang ^{[3
,4
]}

Kim, Kyungtae ^{[3
,4
]}

Ko, Yong-Gi ^{[3
,4
]}

Ahn, Seonyoung ^{[3
,4
]}

Kang, Beom-Goo ^{[1
,2
]}

Chang, Taihyun ^{[3
,4
]}

Lee, Jae-Suk ^{[1
,2
]}

Ree, Moonhor ^{[3
,4
]}

机构：

[1] GIST, Dept Nanobio Mat & Elect, Program Integrated Mol Syst, Kwangju 500712, South Korea

[2] GIST, Sch Mat Sci & Engn, Kwangju 500712, South Korea

[3] Pohang Univ Sci & Technol POSTECH, Div Adv Mat Sci, Ctr Integrated Mol Syst, Pohang Accelerator Lab,Dept Chem,Polymer Res Inst, Pohang 790784, South Korea

[4] Pohang Univ Sci & Technol POSTECH, BK Sch Mol Sci, Pohang 790784, South Korea

来源：

ADVANCED MATERIALS | 2012年 / 24卷 / 08期

基金：

新加坡国家研究基金会;

关键词：

POLYMER THIN-FILMS; COPPER PHTHALOCYANINE; CONJUGATED POLYMER; OXIDE; C-60;

D O I：

10.1002/adma.201103647

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

A novel polymer, poly(2-(N -carbazolyl)ethyl methacrylate) end-capped with fullerene (PCzMA-C 60), has been synthesized via living anionic polymerization. Electrically programmable flash memory devices were easily fabricated with this polymer by using solution coating and metal deposition. This polymer was found in these devices to exhibit bipolar and unipolar switching behaviors with a high ON/OFF current ratio, a long retention time, high reliability, and low power consumption. The excellent properties and easy processability of this polymer open up the possibility of the mass production of high performance nonvolatile memory devices at low cost. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：1062 / 1066

页数：5

共 27 条

[1]

[Anonymous], 1993, FULLERENE

[2] Novel digital nonvolatile memory devices based on semiconducting polymer thin films [J].