Energy dependent carrier relaxation in self-assembled InAs/GaAs quantum dots

被引：0

作者：

Ling, H. S. ^{[1
]}

Lee, C. P. ^{[1
]}

Wang, S. Y. ^{[2
]}

Lo, M. C. ^{[1
]}

机构：

[1] Natl Chiao Tung Univ, Dept Elect Engn, Hsinchu 300, Taiwan

[2] Acad Sinica, Inst Astron & Astrophys, Taipei, Taiwan

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 9 | 2008年 / 5卷 / 09期

关键词：

D O I：

10.1002/pssc.200779253

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We performed the selective excitation photoluminescence (SEPL) spectroscopy studies on InAs/GaAs self-assembled quantum dots (QDs). Under different excitation energies, different groups of QDs are selected and emit light. The excited carriers relax to the ground state through different mechanisms when excited at different energies. Three distinct regions with different mechanisms in carrier excitations and relaxation are identified in the emission spectra. These three regions can be categorized, from high energy to low energy, as continuum absorption, electronic state excitation, and multi-phonon resonance. The QDs special joint density-of-state tail extending from the wetting layer peak facilitates the carrier relaxation and was suggested to explain these spectral results. (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

引用

页码：2709 / +

页数：2