High Device Yield Carbon Nanotube NFETs for High-Performance Logic Applications

被引：0
|
作者：
Shahrjerdi, Davood [1 ]
Franklin, Aaron D. [1 ]
Oida, Satoshi [1 ]
Tulevski, George S. [1 ]
Han, Shu-Jen [1 ]
Hannon, James B. [1 ]
Haensch, Wilfried [1 ]
机构：
[1] IBM Res, TJ Watson Res Ctr, Yorktown Hts, NY 10598 USA
来源：
2011 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM) | 2011年
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the first analysis of device yield and material composition for several low work-function metal contacts to carbon nanotubes (CNT), including the first demonstration of high-performance n-channel field-effect transistors (NFET) from erbium (Er) and lanthanum (La). Our results indicate drastic improvement in NFET yield by appropriate metal selection and optimization of deposition conditions.
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页数：4
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