Electro-optically induced absorption in α-Si:H/α-SiCN waveguiding multistacks

被引：25

作者：

Della Corte, Francesco G. ^{[1
]}

Rao, Sandro ^{[1
]}

Nigro, Maria A. ^{[1
]}

Suriano, Francesco ^{[1
]}

Summonte, Caterina ^{[2
]}

机构：

[1] Mediterranea Univ, Dept Informat Sci Math Elect & Transportat, I-89060 Reggio Di Calabria, Italy

[2] CNR, Inst Microelect & Microsyst, Unit Bologna, I-40129 Bologna, Italy

来源：

OPTICS EXPRESS | 2008年 / 16卷 / 10期

关键词：

D O I：

10.1364/OE.16.007540

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Electro optical absorption in hydrogenated amorphous silicon (alpha-Si: H) - amorphous silicon carbonitride (alpha-SiCxNy) multilayers have been studied in two different planar multistacks waveguides. The waveguides were realized by plasma enhanced chemical vapour deposition (PECVD), a technology compatible with the standard microelectronic processes. Light absorption is induced at lambda = 1.55 mu m through the application of an electric field which induces free carrier accumulation across the multiple insulator/ semiconductor device structure. The experimental performances have been compared to those obtained through calculations using combined two-dimensional (2-D) optical and electrical simulations. (C) 2008 Optical Society of America.

引用

页码：7540 / 7550

页数：11

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