Very Low Degree of Energetic Disorder as the Origin of High Mobility in an n-channel Polymer Semiconductor

被引：170

作者：

Caironi, Mario ^{[1
,2
]}

Bird, Matt ^{[1
]}

Fazzi, Daniele ^{[2
]}

Chen, Zhihua ^{[3
]}

Di Pietro, Riccardo ^{[1
]}

Newman, Christopher ^{[3
]}

Facchetti, Antonio ^{[3
]}

Sirringhaus, Henning ^{[1
]}

机构：

[1] Univ Cambridge, Cavendish Lab, Cambridge CB3 0HE, England

[2] Ist Italiano Tecnol, Ctr Nano Sci & Technol PoliMi, I-20133 Milan, Italy

[3] Polyera Corp, Skokie, IL 60077 USA

来源：

ADVANCED FUNCTIONAL MATERIALS | 2011年 / 21卷 / 17期

基金：

英国工程与自然科学研究理事会;

关键词：

CHARGE-TRANSPORT; ORGANIC SEMICONDUCTORS; TEMPERATURE; DEPENDENCE; OLIGOMERS;

D O I：

10.1002/adfm.201100592

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

Charge transport is investigated in high-mobility n-channel organic field-effect transistors (OFETs) based on poly{[N,N'-bis(2-octyldodecyl)-naphthalene1,4,5,8-bis(dicarboximide)-2,6-diyl]-alt-5,5'-(2,2'-bithiophene)} (P(NDI2OD-T2), Polyera ActivInk(TM) N2200) with variable-temperature electrical measurements and charge-modulation spectroscopy. Results indicate an unusually uniform energetic landscape of sites for charge-carrier transport along the channel of the transistor as the main reason for the observed high-electron mobility. Consistent with a lateral field-independent transport at temperatures down to 10 K, the reorganization energy is proposed to play an important role in determining the activation energy for the mobility. Quantum chemical calculations, which show an efficient electronic coupling between adjacent units and a reorganization energy of a few hundred meV, are consistent with these findings.

引用

页码：3371 / 3381

页数：11

共 47 条

[1] Electronic Structure and Charge-Transport Properties of N,N′-Bis(cyclohexyl)naphthalene Diimide [J].