Effect of oxygen deficiency on electronic properties and local structure of amorphous tantalum oxide thin films

被引：34

作者：

Denny, Yus Rama ^{[1
]}

Firmansyah, Teguh ^{[2
]}

Oh, Suhk Kun ^{[3
]}

Kang, Hee Jae ^{[3
]}

Yang, Dong-Seok ^{[4
]}

Heo, Sung ^{[5
]}

Chung, JaeGwan ^{[5
]}

Lee, Jae Cheol ^{[5
]}

机构：

[1] Univ Sultan Ageng Tirtayasa, Dept Phys Educ, Banten 42435, Indonesia

[2] Univ Sultan Ageng Tirtayasa, Dept Elect Engn, Banten 42435, Indonesia

[3] Chungbuk Natl Univ, Dept Phys, Cheongju 28644, South Korea

[4] Chungbuk Natl Univ, Dept Phys Educ, Cheongju 28644, South Korea

[5] Samsung Adv Inst Technol, Analyt Engn Ctr, Suwon 16678, South Korea

来源：

MATERIALS RESEARCH BULLETIN | 2016年 / 82卷

基金：

新加坡国家研究基金会;

关键词：

Amorphous materials; Thin films; Sputtering; Electron energy loss spectroscopy; Photoelectron spectroscopy; XAFS (EXAFS and XANES); defects; Electronic structure; X-RAY-ABSORPTION; SPECTROSCOPY; TEMPERATURE; MECHANISMS;

D O I：

10.1016/j.materresbull.2016.03.004

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The dependence of electronic properties and local structure of tantalum oxide thin film on oxygen deficiency have been investigated by means of X-ray photoelectron spectroscopy (XPS), Reflection Electron Energy Loss Spectroscopy (REELS), and X-ray absorption spectroscopy (XAS). The XPS results showed that the oxygen flow rate change results in the appearance of features in the Ta 4f at the binding energies of 23.2 eV, 24.4 eV, 25.8, and 27.3 eV whose peaks are attributed to Ta1+, Ta2+, Ta3+/Ta4+, and Ta5+, respectively. The presence of nonstoichiometric state from tantalum oxide (TaOx) thin films could be generated by the oxygen vacancies. In addition, XAS spectra manifested both the increase of coordination number of the first Ta-O shell and a considerable reduction of the Ta-O bond distance with the decrease of oxygen deficiency. (C) 2016 Elsevier Ltd. All rights reserved.

引用

页码：1 / 6

页数：6

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