Formation of indium nitride nanorods within mesoporous silica SBA-15

被引:11
作者
Chang, Shih-Chieh [1 ]
Huang, Michael H. [1 ]
机构
[1] Natl Tsing Hua Univ, Dept Chem, Hsinchu 30013, Taiwan
关键词
D O I
10.1021/ic702155w
中图分类号
O61 [无机化学];
学科分类号
070301 ; 081704 ;
摘要
We report the first formation of arrays of InN nanorods inside the nanoscale channels of mesoporous silica SBA-15. In(NO3)(3) dissolved in methanol was incorporated into SBA-15 powder without prior pore surface functionalization. Formation of InN nanorod arrays was carried out by ammonolysis at 700 degrees C for 8 h. The final products have been characterized by FT-IR spectra, Si-29 MAS NMR spectra, Raman spectra, XRD patterns, TEM images, nitrogen adsorption-desorption isotherm measurements, and optical spectroscopy. The freestanding InN nanorods observed after silica framework removal with HF solution show diameters of 6-7.5 nm and lengths of 25-50 nm. Formation of a trace amount of ln(2)O(3) was also verified. The InN nanorods exhibit a broad band centered at around 550-600 nm, and a band gap energy of 1.5 eV was determined. No light absorption in the near-IR region was measured. The nanorods give a weak emission band centered at around 600 nm. These optical properties are believed to be related to the possible incorporation of oxygen during InN nanorod synthesis.
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收藏
页码:3135 / 3139
页数:5
相关论文
共 22 条
[1]   Indium nitride (InN): A review on growth, characterization, and properties [J].
Bhuiyan, AG ;
Hashimoto, A ;
Yamamoto, A .
JOURNAL OF APPLIED PHYSICS, 2003, 94 (05) :2779-2808
[2]  
Dingman SD, 2000, ANGEW CHEM INT EDIT, V39, P1470, DOI 10.1002/(SICI)1521-3773(20000417)39:8<1470::AID-ANIE1470>3.0.CO
[3]  
2-L
[4]   Formation of titanium nitride nanoparticles within mesoporous silica SBA-15 [J].
Hsueh, HS ;
Yang, CT ;
Zink, JI ;
Huang, MH .
JOURNAL OF PHYSICAL CHEMISTRY B, 2005, 109 (10) :4404-4409
[5]   Sharp infrared emission from single-crystalline indium nitride nanobelts prepared using guided-stream thermal chemical vapor deposition [J].
Hu, MS ;
Wang, WM ;
Chen, TT ;
Hong, LS ;
Chen, CW ;
Chen, CC ;
Chen, YF ;
Chen, KH ;
Chen, LC .
ADVANCED FUNCTIONAL MATERIALS, 2006, 16 (04) :537-541
[6]   Growth and morphology of 0.80 eV photoemitting indium nitride nanowires [J].
Johnson, MC ;
Lee, CJ ;
Bourret-Courchesne, ED ;
Konsek, SL ;
Aloni, S ;
Han, WQ ;
Zettl, A .
APPLIED PHYSICS LETTERS, 2004, 85 (23) :5670-5672
[7]   Controlled synthesis of single-crystalline InN nanorods [J].
Kryliouk, Olga ;
Park, Hyun Jong ;
Won, Yong Sun ;
Anderson, Tim ;
Davydov, Albert ;
Levin, Igor ;
Kim, Ji Hyun ;
Freitas, Jaime A., Jr. .
NANOTECHNOLOGY, 2007, 18 (13)
[8]   Growth mechanism, structure and IR photoluminescence studies of indium nitride nanorods [J].
Lan, ZH ;
Wang, WM ;
Sun, CL ;
Shi, SC ;
Hsu, CW ;
Chen, TT ;
Chen, KH ;
Chen, CC ;
Chen, YF ;
Chen, LC .
JOURNAL OF CRYSTAL GROWTH, 2004, 269 (01) :87-94
[9]   Synthesis of long indium nitride nanowires with uniform diameters in large quantities [J].
Luo, SD ;
Zhou, WY ;
Zhang, ZX ;
Liu, LF ;
Dou, XY ;
Wang, JX ;
Zhao, XW ;
Liu, DF ;
Gao, Y ;
Song, L ;
Xiang, YJ ;
Zhou, JJ ;
Xie, SS .
SMALL, 2005, 1 (10) :1004-1009
[10]   Electron transport in wurtzite indium nitride [J].
O'Leary, SK ;
Foutz, BE ;
Shur, MS ;
Bhapkar, UV ;
Eastman, LF .
JOURNAL OF APPLIED PHYSICS, 1998, 83 (02) :826-829