Polycrystalline-silicon-based double-gate ion-sensitive field-effect transistors using APTES/SiO2 stack-sensing membrane

被引：0

作者：

Chen, Jun-Rong ^{[1
]}

Chen, Henry J. H. ^{[1
]}

Tseng, Shin-Lun ^{[1
]}

机构：

[1] Natl Chi Nan Univ, Dept Elect Engn, Puli 545, Nantou, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 2022年 / 61卷 / SD期

关键词：

poly-Si; ISFETs; double-gate; APTES; THRESHOLD VOLTAGE; PHYSICAL MODEL; DOUBLE-LAYER; SENSORS; ISFET; CAPACITANCE; HYSTERESIS;

D O I：

10.35848/1347-4065/ac5422

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

This study demonstrated a polycrystalline-silicon (poly-Si)-based double-gate (DG) ion-sensitive field-effect transistors (DG-ISFETs) using APTES/SiO2 stack-sensing membrane. The APTES/SiO2 stack-sensing membrane enhanced the single-gate (SG) sensitivity, and suppressed the hysteresis. The DG structure was preferred to have a capacitive coupling effect and to amplify the sensitivity of ISFETs. The sensitivities of SG- and DG-ISFETs were approximately 56.8 and 294 mV pH(-1), respectively. In addition, the corresponding amplifying factor was approximately 5.2. With this approach, the poly-Si DG-ISFETs can be a candidate for future high-performance biochemical sensing applications.

引用

页数：6

共 33 条

[11] Polysilicon Channel TFT With Separated Double-Gate for Unified RAM (URAM)Unified Function for Nonvolatile SONOS Flash and High-Speed Capacitorless 1T-DRAM
Han, Jin-Woo
Ryu, Seong-Wan
Kim, Dong-Hyun
Choi, Yang-Kyu
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (03) : 601 - 607
[12] A physical model for drift in pH ISFETs
Jamasb, S
Collins, S
Smith, RL
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 1998, 49 (1-2) : 146 - 155
[13] A physical model for threshold voltage instability in Si3N4-gate H+-sensitive FET's (pH ISFET's)
Jamasb, S
Collins, SD
Smith, RL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1998, 45 (06) : 1239 - 1245
[14] Sensitivity enhancement of amorphous InGaZnO thin film transistor based extended gate field-effect transistors with dual-gate operation
Jang, Hyun-June
Gu, Ja-Gyeong
Cho, Won-Ju
[J]. SENSORS AND ACTUATORS B-CHEMICAL, 2013, 181 : 880 - 884
[15] Improved sensing performance of polycrystalline-silicon based dual-gate ion-sensitive field-effect transistors using high-k stacking engineered sensing membrane
Jang, Hyun-June
Bae, Tae-Eon
Cho, Won-Ju
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (25)
[16] Fabrication of high-performance fully depleted silicon-on-insulator based dual-gate ion-sensitive field-effect transistor beyond the Nernstian limit
Jang, Hyun-June
Cho, Won-Ju
[J]. APPLIED PHYSICS LETTERS, 2012, 100 (07)
[17] Detection principles of biological and chemical FET sensors
Kaisti, Matti
[J]. BIOSENSORS & BIOELECTRONICS, 2017, 98 : 437 - 448
[18] Electrolyte-Insulator-Semiconductor pH Sensors with Arrayed Patterns Manufactured by Nano Imprint Technology
Lee, Tzu Nien
Chen, Henry J. H.
Huang, Yo-Chen
Hsieh, Kuang-Chien
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 2018, 165 (14) : B767 - B772
[19] Study on Sensing Properties of Ion-Sensitive Field-Effect-Transistors Fabricated With Stack Sensing Membranes
Lee, Tzu Nien
Chen, Henry J. H.
Hsieh, Kuang Chien
[J]. IEEE ELECTRON DEVICE LETTERS, 2016, 37 (12) : 1642 - 1645
[20] LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

← 1 2 3 4 →