Controlling mechanical, structural and optical properties of Al2O3 thin films deposited by plasma-enhanced atomic layer deposition with substrate biasing

被引:12
作者
Beladiya, V [1 ]
Faraz, T. [2 ]
Kessels, W. M. M. [2 ]
Tuennermann, A. [1 ,3 ]
Szeghalmi, A. [1 ,3 ]
机构
[1] Friedrich Schiller Univ Jena, Abbe Ctr Photon, Inst Appl Phys, Albert Einstein Str 15, D-07745 Jena, Germany
[2] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands
[3] Fraunhofer Inst Appl Opt & Precis Engn, Albert Einstein Str 7, D-07745 Jena, Germany
来源
ADVANCES IN OPTICAL THIN FILMS VI | 2018年 / 10691卷
关键词
atomic layer deposition; plasma ALD; aluminum oxide; substrate biasing; mechanical stress; Fourier transform infrared spectroscopy; XPS; ellipsometry; optical loss; STRESS;
D O I
10.1117/12.2312516
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Complex interference multilayer systems typically implemented in high-performance optics consists of several layers of low and high refractive index materials. Low mechanical stress of the coatings is desired to avoid cracking and delamination of the film or a deformation of the substrate. It is known that the ion energies in plasma-assisted deposition can be employed to control material properties and thereby mechanical stress. In this study, we evaluate the influence of substrate biasing on mechanical stress and optical properties of alumina (Al2O3) coatings deposited by plasma enhanced atomic layer deposition (PEALD). Substrate biasing up to -300 V was applied during O-2 plasma exposure in the second step of a two-step PEALD process. To distinguish the physical effect of ion bombardment from the physico-chemical effect, a substrate bias of -100 V was applied separately and only during Ar plasma exposure that constituted the third step of a three-step PEALD process. Al2O3 films were characterized using spectroscopic ellipsometry, spectrophotometry, x-ray photoelectron spectroscopy (XPS), x-ray diffractometry (XRD), x-ray reflectometry (XRR), Fourier transform infrared spectroscopy (FT-IR), wafer-curvature measurement and atomic force microscopy (AFM).
引用
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页数:13
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