An ESD-protected, 2.45/5.25-GHz dual-band CMOS LNA with series LC loads and a 0.5-V supply

被引：0

作者：

Hyvonen, S ^{[1
]}

Bhatia, K ^{[1
]}

Rosenbaum, E ^{[1
]}

机构：

[1] Univ Illinois, Dept Elect & Comp Engn, Urbana, IL 61801 USA

来源：

2005 IEEE RADIO FREQUENCY INTEGRATED CIRCUITS (RFIC) SYMPOSIUM, DIGEST OF PAPERS | 2005年

关键词：

CMOS; LNA; dual band; ESD; linearity;

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An ESD-protected, CMOS, Dual-Band 2.45/5.25-GHz LNA was designed, fabricated, and characterized. Operation in two bands is enabled by a dual-band input matching network and separate, series LC load resonators for each operating frequency. At 2.45 GHz, the measured voltage gain and IIP3 are 13.9 dB and +2.9 dBm, respectively. At 5.25 GHz, the measured voltage gain and IIP3 are 8.7 dB and +3.2 dBm, respectively. The LNA consumes 2.5 mW from a 0.5-V supply. The ESD protection level of the LNA is over 9 kV (Human Body Model).

引用

页码：43 / 46

页数：4

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