Effect on nitrogen acceptor as Mg is alloyed into ZnO

被引：34

作者：

Gai, Y. Q. ^{[2
,3
]}

Yao, B. ^{[1
]}

Wei, Z. P. ^{[1
]}

Li, Y. F. ^{[1
]}

Lu, Y. M. ^{[1
]}

Shen, D. Z. ^{[1
]}

Zhang, J. Y. ^{[1
]}

Zhao, D. X. ^{[1
]}

Fan, X. W. ^{[1
]}

Li, Jingbo ^{[2
]}

Xia, Jian-Bai ^{[2
]}

机构：

[1] Chinese Acad Sci, Inst Semicond, State Key Lab Superlattice & Microstruct, Beijing 10083, Peoples R China

[2] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[3] Chinese Acad Sci, Grad Sch, Beijing 100039, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2857496

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Our Raman measurement indicates that the intensity of the peaks (510 and 645 cm(-1)) related to nitrogen concentration is enhanced in MgZnO compared with that in ZnO. Using first-principles band structure methods, we calculated the formation energy and transition energy level for nitrogen acceptor in ZnO and random MgxZn1-xO (with x=0.25) alloy. Our calculations show that the incorporation of nitrogen can be enhanced as Mg is alloyed into ZnO, which agrees with our experiments. The acceptor energy level deeper in the alloy ascribes to the downward shift of the valence-band maximum edge in the presence of magnesium. (c) 2008 American Institute of Physics.

引用

页数：3

共 31 条

[1] ZnO diode fabricated by excimer-laser doping [J].