Memory effect in ferroelectric-semiconductor with incommensurate phase TlGaSe2

被引：30
作者：
Aliyev, VP
Babayev, SS
Mammadov, TG
Seyidov, MHY
Suleymanov, RA
机构：
[1] Azerbaijan Natl Acad Sci, Inst Phys Azerbaijan, Dept Optoelect, AZ-1143 Baku, Azerbaijan
[2] Baku State Univ, Baku, Azerbaijan
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 128卷 / 01期
关键词：
ferroelectrics; incommensurate; phase transition;
D O I：
10.1016/S0038-1098(03)00619-7
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
The paper is devoted to the investigations of the non-equilibrium properties of the incommensurate (INC) phase of the improper ferroelectric-semiconductor TlGaSe2. The influence of the prehistory of the heat treating of the crystal, i.e. annealing at a fixed, stabilized temperature in the region of INC-phase on the dielectric constant (epsilon) in the vicinity of the phase transition (PT)-INC phase (the commensurate (C) ferroelectric phase) was studied. The peculiar case of the memory effect leading to the temperature range change of the INC-phase existence is observed for the first time in TlGaSe2. (C) 2003 Elsevier Ltd. All rights reserved.
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页码：25 / 28
页数：4
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