Hysteresis modeling of magnetic devices using dipole distribution
被引:0
作者:
Cheng, KWE
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h-index: 0
机构:
Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Cheng, KWE
[1
]
Lu, Y
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h-index: 0
机构:
Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Lu, Y
[1
]
Ho, SL
论文数: 0引用数: 0
h-index: 0
机构:
Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R ChinaHong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
Ho, SL
[1
]
机构:
[1] Hong Kong Polytech Univ, Dept Elect Engn, Hong Kong, Hong Kong, Peoples R China
B-H loop;
dipole;
hysteresis;
modeling;
normal distribution;
D O I:
10.1109/TMAG.2005.845069
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A new modeling method based on the normal distribution of dipoles is used to represent the B-H loop of magnetic materials. The dipole representation can be expressed either in 2-orientation or 4-orientation. Depending on the accuracy required, the modeling method typically requires only magnetic saturation parameters, the critical H-field, and a few control parameters. Experimental results show that the method can be used to represent the B-H loop of materials very accurately.