Lattice parameter of ZnSe crystals grown from melt under Zn partial pressure

被引：6

作者：

Udono, H

Kikuma, I

Okada, Y

机构：

[1] Ibaraki Univ, Fac Engn, Hitachi, Ibaraki 316, Japan

[2] Electrotech Lab, Ibaraki 305, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 1998年 / 193卷 / 1-2期

关键词：

ZnSe; lattice parameter; the bond method; melt growth; pressure control; stoichiometry;

D O I：

10.1016/S0022-0248(98)00475-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Dependence of the lattice parameter of melt-grown ZnSe on Zn partial pressure have been measured by the Bond method. The lattice parameters changed between 0.566902 and 0.566908 nm depending on the partial pressure of Zn during growth. The minimum lattice parameter was observed at the Zn reservoir temperature of 1000 degrees C, where the melt composition was near stoichiometry. (C) 1998 Elsevier Science B.V. All rights reserved.

引用

页码：39 / 42

页数：4