Dynamics of extremely anisotropic etching of InP nanowires by HCl

被引：15

作者：

Borgstrom, Magnus T. ^{[1
]}

Wallentin, Jesper ^{[1
]}

Kawaguchi, Kenichi ^{[1
]}

Samuelson, Lars ^{[1
]}

Deppert, Knut ^{[1
]}

机构：

[1] Lund Univ, S-22100 Lund, Sweden

来源：

CHEMICAL PHYSICS LETTERS | 2011年 / 502卷 / 4-6期

基金：

瑞典研究理事会;

关键词：

III-V NANOWIRES; GROWTH; RATIO; MOVPE;

D O I：

10.1016/j.cplett.2010.12.061

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

We report on the dynamics of in situ etching of nanowires using an etching agent which allows for parameter optimization for nanowire synthesis without concerns of tapering issues. Upon etching of InP nanowires using HCl it is found that HCl mainly reacts with the precursor TMI, its decomposition species, and physisorbed In. The reaction with solid InP is less rapid and diffusion limited. We find a gas-phase etch process which is metal assisted and has a high aspect ratio of 1:100. (C) 2011 Elsevier B.V. All rights reserved.

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页码：222 / 224

页数：3

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