Impact of tungsten doping on the dynamics of the photo-induced insulator-metal phase transition in VO2 thin film investigated by optical pump-terahertz probe spectroscopy

被引：15

作者：

Emond, Nicolas ^{[1
]}

Ibrahim, Akram ^{[1
]}

Torriss, Badr ^{[1
]}

Hendaoui, Ali ^{[1
,2
]}

Al-Naib, Ibraheem ^{[3
]}

Ozaki, Tsuneyuki ^{[1
]}

Chaker, Mohamed ^{[1
]}

机构：

[1] INRS Energie, Mat & Telecommun, 1650 Blvd Lionel Boulet, Varennes, PQ J3X 1S2, Canada

[2] Alfaisal Univ, Dept Phys, Coll Sci & Gen Studies, Riyadh 11533, Saudi Arabia

[3] Univ Dammam, Dept Biomed Engn, Coll Engn, Dammam 31441, Saudi Arabia

来源：

APPLIED PHYSICS LETTERS | 2017年 / 111卷 / 09期

关键词：

D O I：

10.1063/1.4995245

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of tungsten (W) doping on the ultrafast dynamics of the photo-induced insulator-metal phase transition (IMT) is investigated at room temperature in epitaxially grown vanadium dioxide (VO2) thin films by means of optical pump-terahertz (THz) probe spectroscopy. It is observed that the THz transmission variation of the films across the IMT follows a bi-exponential decrease characterized by two time constants, one corresponding to a fast process and the other to a slower process. W-doping (i) reduces the photo-excitation fluence threshold required for triggering the IMT, (ii) accelerates the slow process, and (iii) increases the THz transient transmission variation for corresponding fluences. From the Drude-Smith model, it is deduced that a strong carrier confinement and an enhancement of the transient conductivity occur across the IMT. The IMT is also accompanied by an increase in the carrier concentration in the films, which is enhanced by W-doping. Our results suggest that W-doped VO2 could be advantageously exploited in applications such as ultrafast THz optical switching and modulation devices. Published by AIP Publishing.

引用

页数：5

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