Electronic properties of triangular and hexagonal MoS2 quantum dots

被引:47
作者
Pavlovic, S. [1 ]
Peeters, F. M. [1 ]
机构
[1] Univ Antwerp, Dept Fys, B-2020 Antwerp, Belgium
关键词
BAND-STRUCTURES; POLARIZATION;
D O I
10.1103/PhysRevB.91.155410
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Using the tight-binding approach, we calculate the electronic structure of triangular and hexagonal MoS2 quantum dots. Due to the orbital asymmetry we show that it is possible to form quantum dots with the same shape but having different electronic properties. The electronic states of triangular and hexagonal quantum dots are explored, as well as the local and total density of states and the convergence towards the bulk spectrum with dot size is investigated. Our calculations show that: (1) edge states appear in the band gap, (2) that there are a larger number of electronic states in the conduction band as compared to the valence band, and (3) the relative number of edge states decreases with increasing dot size.
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页数:7
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