Determination of mechanical material properties of piezoelectric ZnO films

被引：1

作者：

Koller, S ^{[1
]}

Ziebart, V ^{[1
]}

Paul, O ^{[1
]}

Brand, O ^{[1
]}

Baltes, H ^{[1
]}

Sarro, PM ^{[1
]}

Vellekoop, MJ ^{[1
]}

机构：

[1] ETH Zurich, Phys Elect Lab, CH-8093 Zurich, Switzerland

来源：

SMART STRUCTURES AND MATERIALS 1998: SMART ELECTRONICS AND MEMS | 1998年 / 3328卷

关键词：

residual stress; ZnO films; Young's modulus; plane-strain modulus; mechanical properties; thin films;

D O I：

10.1117/12.320160

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This work describes the determination of mechanical properties of sputtered piezoelectric zinc oxide (ZnO) films. The residual stress of the thin ZnO films was measured using the wafer curvature and the sputter parameters for growth of films with low tensile stress determined. Tensile films are often preferred in membrane structures because, e.g., buckling is avoided. A membrane deflection method was applied to measure the plane-strain modulus of ZnO films on SiNx. A new model which includes the flexural rigidity of a multilayered membrane was used to calculate the residual stress and plane-strain modulus of the membrane layers. The measured plane-strain modulus for ZnO on SiNx is 115 GPa. Nano indenter experiments on a ZnO film deposited on a Al-SiO2-Si substrate revealed a similar value of 122 GPa for the plane-strain modulus. These results can be used for more accurate modeling of ZnO based microsensors and actuators, such as Lamb wave sensors.

引用

页码：102 / 109

页数：8