Simultaneous regulation of electrical and thermal transport properties in MnTe chalcogenides via the incorporation of p-type Sb2Te3

It is reported that MnTe doped with p-type Sb2Te3 shows an encouraging thermoelectric performance at elevated temperatures as in MnTe + x at% Sb2Te3 samples (x = 0, 0.5, 1, 1.5, 2) samples. After simultaneous introduction of holes, the Fermi level of MnTe shifts toward the valence band, which resulting the improved electrical performance. Whereas the dispersed Sb2Te3 nano-scale precipitates cooperates the deterioration of lattice thermal conductivities via phonon scattering centers, such as edge dislocations and large angle grain boundaries. Consequently, a maximum ZT of 1.2 at 873 K has been achieved for 1.5 at% Sb2Te3 doped MnTe sample which increases by 77% in comparison with the un-doped sample.