Characterization of the temperature dependence of the thermoreflectance coefficient for conductive thin films

被引：104

作者：

Favaloro, T. ^{[1
,2
]}

Bahk, J. -H. ^{[2
]}

Shakouri, A. ^{[1
,2
]}

机构：

[1] Univ Calif Santa Cruz, Baskin Sch Engn, Santa Cruz, CA 95064 USA

[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA

来源：

REVIEW OF SCIENTIFIC INSTRUMENTS | 2015年 / 86卷 / 02期

关键词：

THERMAL-CONDUCTIVITY; OPTICAL-PROPERTIES; RESOLUTION; CIRCUITS; SILICON; GOLD; AU; CU;

D O I：

10.1063/1.4907354

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

We describe a novel approach for calibration of the thermoreflectance coefficient, ideally suited for measurements in a vacuum thermostat, and present the high temperature thermoreflectance coefficients for several metals commonly encountered in electronic devices: gold, platinum, and aluminum. The effect of passivation on these metals is also examined, and we demonstrate the signal to noise ratio of a thermoreflectance measurement can be improved with informed selection of the dielectric layer thickness. Furthermore, the thermo-optic coefficients of the metals are extracted over a wide temperature range. The results presented here can be utilized in the optimization of experimental configurations for high temperature thermoreflectance imaging. (C) 2015 AIP Publishing LLC.

引用

页数：9

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