Tunable Optoelectronic Properties of WS2 by Local Strain Engineering and Folding

被引:52
作者
Khan, Ahmed Raza [1 ,2 ]
Lu, Teng [3 ]
Ma, Wendi [1 ]
Lu, Yuerui [1 ]
Liu, Yun [3 ]
机构
[1] Australian Natl Univ, Coll Engn & Comp Sci, Res Sch Elect Energy & Mat Engn, Canberra, ACT 2601, Australia
[2] Univ Engn & Technol Rachna Coll, Dept Ind & Mfg Engn, Lahore 54700, Pakistan
[3] Australian Natl Univ, Res Sch Chem, Canberra, ACT 2601, Australia
关键词
2D materials; charge transfer; strain engineering; WS; (2); BAND-GAP; MONOLAYER MOS2; TRANSITION; GRAPHENE; LAYERS; MICROSCOPY; EMITTERS;
D O I
10.1002/aelm.201901381
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
Local strain engineering is an exciting approach to tune optoelectronic properties of materials. Two-dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well-suited for this purpose due to their high flexibility and deformability. Local strain engineering in 2D TMDs is typically achieved via strained wrinkles. Wrinkles on thick TMD layers have been reported to show interesting photoluminescence enhancement due to bandgap modulation and funneling effect. However, the wrinkles in ultrathin TMDs are not investigated because they can easily fall down to form folds. Both wrinkles and folds are achieved simultaneously in 1-3L tungsten disulfide (WS2) using a new fabrication technique. A layer-dependent reduction in surface potential is found for both folded layers and perfect packed layers due to the dominant interlayer screening effect. The strain produced from the wrinkles modulates the semiconductive junction properties significantly. Thermoionic modeling suggests that strained (1.6%) wrinkles can lower the Schottky barrier height (SBH) by 20%. Upon illumination, SBH reduces significantly due to photogenerated carriers. This is an important advance toward controlling the optoelectronic properties of 2D TMDs via strain engineering, with applications for electronics and optoelectronics devices.
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页数:8
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共 67 条
  • [1] Ahmed T., 2019, ADV FUNCT MATER, V29, P1
  • [2] Two-dimensional flexible nanoelectronics
    Akinwande, Deji
    Petrone, Nicholas
    Hone, James
    [J]. NATURE COMMUNICATIONS, 2014, 5
  • [3] Strain engineering of WS2, WSe2, and WTe2
    Amin, B.
    Kaloni, T. P.
    Schwingenschloegl, U.
    [J]. RSC ADVANCES, 2014, 4 (65): : 34561 - 34565
  • [4] Stretching and Breaking of Ultrathin MoS2
    Bertolazzi, Simone
    Brivio, Jacopo
    Kis, Andras
    [J]. ACS NANO, 2011, 5 (12) : 9703 - 9709
  • [5] Deterministic strain-induced arrays of quantum emitters in a two-dimensional semiconductor
    Branny, Artur
    Kumar, Santosh
    Proux, Raphael
    Gerardot, Brian D.
    [J]. NATURE COMMUNICATIONS, 2017, 8
  • [6] Castellanos-Gomez A., 2013, NANO LETT, V23, P534
  • [7] Isolation and characterization of few-layer black phosphorus
    Castellanos-Gomez, Andres
    Vicarelli, Leonardo
    Prada, Elsa
    Island, Joshua O.
    Narasimha-Acharya, K. L.
    Blanter, Sofya I.
    Groenendijk, Dirk J.
    Buscema, Michele
    Steele, Gary A.
    Alvarez, J. V.
    Zandbergen, Henny W.
    Palacios, J. J.
    van der Zant, Herre S. J.
    [J]. 2D MATERIALS, 2014, 1 (02):
  • [8] Folded MoS2 layers with reduced interlayer coupling
    Castellanos-Gomez, Andres
    van der Zant, Herre S. J.
    Steele, Gary A.
    [J]. NANO RESEARCH, 2014, 7 (04) : 572 - 578
  • [9] Local Strain Engineering in Atomically Thin MoS2
    Castellanos-Gomez, Andres
    Roldan, Rafael
    Cappelluti, Emmanuele
    Buscema, Michele
    Guinea, Francisco
    van der Zant, Herre S. J.
    Steele, Gary A.
    [J]. NANO LETTERS, 2013, 13 (11) : 5361 - 5366
  • [10] Electric-Field Screening in Atomically Thin Layers of MoS2: the Role of Interlayer Coupling
    Castellanos-Gomez, Andres
    Cappelluti, Emmanuele
    Roldan, Rafael
    Agrait, Nicolas
    Guinea, Francisco
    Rubio-Bollinger, Gabino
    [J]. ADVANCED MATERIALS, 2013, 25 (06) : 899 - 903