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Effect of van der Waals interactions on the stability of SiC polytypes
被引:16
作者:
Kawanishi, Sakiko
[1
,2
]
Mizoguchi, Teruyasu
[1
]
机构:
[1] Univ Tokyo, Inst Ind Sci, Meguro Ku, 4-6-1 Komaba, Tokyo 1538505, Japan
[2] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, 2-1-1 Katahira, Sendai, Miyagi 9808577, Japan
基金:
日本学术振兴会;
关键词:
CUBIC SILICON-CARBIDE;
ELECTRONIC-PROPERTIES;
SUBLIMATION GROWTH;
LIQUID-PHASE;
NUCLEATION;
ENERGY;
D O I:
10.1063/1.4948329
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Density functional theory calculations with a correction of the long-range dispersion force, namely, the van der Waals (vdW) force, are performed for SiC polytypes. The lattice parameters are in good agreement with those obtained from the experiments. Furthermore, the stability of the polytypes in the experiments, which show 3C-SiC as the most stable, is reproduced by the present calculations. The effects of the vdW force on the electronic structure and the stability of polytypes are discussed. We observe that the vdW interaction is more sensitive to the cubic site than the hexagonal site. Thus, the influence of the vdW force increases with decreasing the hexagonality of the polytype, which results in the confirmation that the most stable polytype is 3C-SiC. Published by AIP Publishing.
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页数:5
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