Broadly tunable high-power InAs/GaAs quantum-dot external cavity diode lasers

被引：80

作者：

Fedorova, Ksenia A. ^{[1
]}

Cataluna, Maria Ana ^{[1
]}

Krestnikov, Igor ^{[2
]}

Livshits, Daniil ^{[2
]}

Rafailov, Edik U. ^{[1
]}

机构：

[1] Univ Dundee, Photon & Nanosci Grp, Sch Engn Phys & Math, Dundee DD1 4HN, Scotland

[2] Innolume GmbH, D-44263 Dortmund, Germany

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 18期

基金：

英国工程与自然科学研究理事会;

关键词：

TUNING RANGE; NM; SPECTROSCOPY; EMISSION; SPECTRUM;

D O I：

10.1364/OE.18.019438

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A record broadly tunable high-power external cavity InAs/GaAs quantum-dot diode laser with a tuning range of 202 nm (1122 nm-1324 nm) is demonstrated. A maximum output power of 480 mW and a side-mode suppression ratio greater than 45 dB are achieved in the central part of the tuning range. We exploit a number of strategies for enhancing the tuning range of external cavity quantum-dot lasers. Different waveguide designs, laser configurations and operation conditions (pump current and temperature) are investigated for optimization of output power and tunability. (C) 2010 Optical Society of America

引用

页码：19438 / 19443

页数：6

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