Hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot structure with enhanced photoluminescence

被引：20

作者：

Ji, Hai-Ming ^{[1
,2
]}

Liang, Baolai ^{[3
]}

Simmonds, Paul J. ^{[3
]}

Juang, Bor-Chau ^{[1
]}

Yang, Tao ^{[2
]}

Young, Robert J. ^{[4
]}

Huffaker, Diana L. ^{[1
,3
]}

机构：

[1] Univ Calif Los Angeles, Dept Elect Engn, Los Angeles, CA 90095 USA

[2] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China

[3] Univ Calif Los Angeles, Calif NanoSyst Inst, Los Angeles, CA 90095 USA

[4] Univ Lancaster, Dept Phys, Lancaster LA1 4YB, England

来源：

APPLIED PHYSICS LETTERS | 2015年 / 106卷 / 10期

基金：

美国国家科学基金会;

关键词：

SOLAR-CELLS; EFFICIENCY;

D O I：

10.1063/1.4914895

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate the photoluminescence (PL) properties of a hybrid type-I InAs/GaAs and type-II GaSb/GaAs quantum dot (QD) structure grown in a GaAs matrix by molecular beam epitaxy. This hybrid QD structure exhibits more intense PL with a broader spectral range, compared with control samples that contain only InAs or GaSb QDs. This enhanced PL performance is attributed to additional electron and hole injection from the type-I InAs QDs into the adjacent type-II GaSb QDs. We confirm this mechanism using time-resolved and power-dependent PL. These hybrid QD structures show potential for high efficiency QD solar cell applications. (C) 2015 AIP Publishing LLC.

引用

页数：5

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