Electrical characterization of the ITO/NiPc/PEDOT: PSS junction diode

被引：27
|
作者：
Shah, Mutabar [1 ]
Sayyad, M. H. [1 ]
Karimov, Kh S. [1 ,2 ]
Wahab, Fazal [1 ]
机构：
[1] Ghulam Ishaq Khan Inst Engn Sci & Technol, Topi 23640, Khyber Pakhtunk, Pakistan
[2] Acad Sci, Phys Tech Inst, Dushanbe 734025, Tajikistan
来源：
JOURNAL OF PHYSICS D-APPLIED PHYSICS | 2010年 / 43卷 / 40期
关键词：
SCHOTTKY; PARAMETERS; EXTRACTION; INJECTION; ANODES; PLOT; ITO;
D O I：
10.1088/0022-3727/43/40/405104
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
This paper reports on the fabrication and characterization of an ITO/NiPc/PEDOT : PSS junction diode. A thin film of nickel phthalocyanine (NiPc) was deposited by the thermal vacuum deposition method on indium tin oxide (ITO) used as a substrate. The current-voltage characteristics of the diode were measured at room temperature under dark condition and showed rectifying behaviour. The values of several electrical parameters such as ideality factor, barrier height, conductivity, and series and shunt resistances were calculated.
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页数：5
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