CMOS compatible broadband graphene/silicon nanocrystals photodetectors

被引：0

作者：

Wang Dongchen ^{[1
]}

Xu Pengxiao ^{[1
]}

Wang Yan ^{[1
]}

Wu Yun ^{[1
]}

Cao Zhengyi ^{[1
]}

You Guoqing ^{[1
]}

Tang Guanghua ^{[1
]}

机构：

[1] Nanjing Elect Devices Inst, Nanjing 210016, Peoples R China

来源：

SIXTH SYMPOSIUM ON NOVEL OPTOELECTRONIC DETECTION TECHNOLOGY AND APPLICATIONS | 2020年 / 11455卷

基金：

中国国家自然科学基金;

关键词：

graphene; silicon nanocrystals; broadband photodetectors; CMOS compatible; QUANTUM DOTS;

D O I：

10.1117/12.2565345

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Broadband photodetectors are becoming attractive in all weather and all time detection. However, silicon, germanium or compound semiconductors could not cover the visible and infrared wavebands which are commonly used in optoelectronic application. Here, we demonstrate a broadband photodetector based on graphene and silicon nanocrystals which are all CMOS-compatible. We achieved a photodetector which photoelectric response range covering visible and infrared (400-1600nm) and peak response up to 630mA/W. Furthermore, the photoelectric response time lower than 50 mu s.

引用

页数：4

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