The structural and optical properties of metallic doped copper (I) iodide thin films synthesized by SILAR method

被引:35
作者
Ighodalo, Kester O. [1 ]
Obi, Daniel [1 ,2 ]
Agbogu, A. [1 ]
Ezealigo, Blessing N. [1 ]
Nwanya, Assumpta C. [1 ]
Mammah, Sylvester L. [3 ]
Bucher, R. [4 ]
Maaza, Malik [4 ,5 ]
Ezema, Fabian I. [1 ,4 ,5 ]
机构
[1] Univ Nigeria, Dept Phys & Astron, Nsukka, Nigeria
[2] Univ Quebec, Inst Natl Rech Sci Energie Mat & Telecommun, 1650 Boul Lionel Boulet, Varennes, PQ J3X 1S2, Canada
[3] Ken Sara Wiwa Polytech, Dept Sci Lab Technol, Bori, Rivers State, Nigeria
[4] Natl Res Fdn, iThemba LABS, Nanosci African Network NANOAFNET, 1 Old Faure Rd,Somerset West 7129,POB 722, Somerset West, Western Cape Pr, South Africa
[5] Univ South Africa UNISA, UNESCO, UNISA Africa Chair Nanosci Nanotechnol, Coll Grad Studies, POB 392, Pretoria, South Africa
关键词
CuI; Photoluminescence; Successive ionic layer adsorption and reaction (SILAR); SEM; Williamson - Hall Plots; Semiconductor doping; IONIC LAYER ADSORPTION; SOLAR-CELLS; CUI FILM; DEPOSITION; GROWTH; TEMPERATURE; MORPHOLOGY; CUBR; CBD;
D O I
10.1016/j.materresbull.2017.06.032
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The addition of impurities, method of synthesis and the nature of substrate are known to affect the property of deposited thin films. Aluminum (Al), Lead (Pb) and Zinc (Zn) were used as dopants for cuprous iodide (CuI) films at room temperature by SILAR method which effected the surface morphology, optical, structural and photoluminescence properties compared to undopedCul thin film. The estimated energy band gap for the doped films varied from 1.90 to 2.30 eV. XRD result showed a face-centered cubic crystal structure with high peak orientation corresponding to (111) orientation. The Williamson and Hall (W-H) analysis was used to determine the contribution of crystallite size and lattice strain on the peak broadening of the deposited thin films. A higher optical transmittance was observed for all doped films, with photoluminescence occurrence in the near visible spectrum (400-440 nm) wavelength. Optical conductivity value 8.5 x 10(13)/s-11.5 x 10(13)/s at 2.4-3.0 eV was observed for the doped Films. (C) 2017 Elsevier Ltd. All rights reserved.
引用
收藏
页码:528 / 536
页数:9
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