A Simulation of DC and AC performance of 4H-SiC Tunneling Emitter Bipolar Transistor (TEBT)

被引：0
|
作者：
Liu, Jing [1 ]
Zhang, Yuming [1 ]
Zhang, Yimen [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian, Peoples R China
来源：
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年
关键词：
4H-SiC; tunneling emitter; bipolar transistor;
D O I：
10.1109/FSKD.2009.167
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel HBT structure, Tunneling Emitter Bipolar Transistor (TEBT), is proposed in this paper. The DC and AC small-signal characteristics of the TEBT are simulated. The DC gain of the proposed structure is 45. To get better AC performance, the structure is modified, reducing the thickness of collector and enhancing the doping of base. the characteristic frequency (f(T)) is 2.6 GHz, the maximum oscillating frequency (f(max)) is 67.0 GHz and the corresponding power gain can reach 32.
引用
收藏
页码：326 / +
页数：2
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