A Simulation of DC and AC performance of 4H-SiC Tunneling Emitter Bipolar Transistor (TEBT)

被引：0
|
作者：
Liu, Jing [1 ]
Zhang, Yuming [1 ]
Zhang, Yimen [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian, Peoples R China
来源：
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年
关键词：
4H-SiC; tunneling emitter; bipolar transistor;
D O I：
10.1109/FSKD.2009.167
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel HBT structure, Tunneling Emitter Bipolar Transistor (TEBT), is proposed in this paper. The DC and AC small-signal characteristics of the TEBT are simulated. The DC gain of the proposed structure is 45. To get better AC performance, the structure is modified, reducing the thickness of collector and enhancing the doping of base. the characteristic frequency (f(T)) is 2.6 GHz, the maximum oscillating frequency (f(max)) is 67.0 GHz and the corresponding power gain can reach 32.
引用
收藏
页码：326 / +
页数：2
相关论文
共 50 条
  • [31] NOVEL 4H-SIC BIPOLAR JUNCTION TRANSISTOR (BJT) WITH IMPROVED CURRENT GAIN
    Daranagama, Thilini
    Pathirana, Vasantha
    Udrea, Florin
    McMahon, Richard
    2015 IEEE 13TH BRAZILIAN POWER ELECTRONICS CONFERENCE AND 1ST SOUTHERN POWER ELECTRONICS CONFERENCE (COBEP/SPEC), 2015,
  • [32] Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer
    张倩
    张玉明
    元磊
    张义门
    汤晓燕
    宋庆文
    ChinesePhysicsB, 2012, 21 (08) : 574 - 577
  • [33] Fabrication and characterization of 4H-SiC bipolar junction transistor with double base epilayer
    Zhang Qian
    Zhang Yu-Ming
    Yuan Lei
    Zhang Yi-Men
    Tang Xiao-Yan
    Song Qing-Wen
    CHINESE PHYSICS B, 2012, 21 (08)
  • [34] A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
    Torvik, John T.
    Leksono, M.
    Pankove, J.I.
    Van Zeghbroeck, B.
    MRS Internet Journal of Nitride Semiconductor Research, 1999, 4
  • [35] A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C
    Torvik, JT
    Leksono, M
    Pankove, JI
    Van Zeghbroeck, B
    MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4 (03): : art. no. - 3
  • [36] A high current gain 4H-SiC NPN power bipolar junction transistor
    Zhang, JH
    Luo, YB
    Alexandrov, P
    Fursin, L
    Zhao, JH
    IEEE ELECTRON DEVICE LETTERS, 2003, 24 (05) : 327 - 329
  • [37] Hybrid MOS-gated bipolar transistor using 4H-SiC BJT
    Tang, Y
    Chow, TP
    Agarwal, AK
    Ryu, SH
    Palmour, JW
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1341 - 1343
  • [38] Design and Performances of 4H-SiC Bipolar Mode Field Effect Transistor (BMFETs)
    Bellone, Salvatore
    Di Benedetto, Luigi
    IEEE TRANSACTIONS ON POWER ELECTRONICS, 2014, 29 (05) : 2174 - 2179
  • [39] Degradation of Current Gain for Ion Implanted 4H-SiC Bipolar Junction Transistor
    Watabe, Yuki
    Tajima, Taku
    Nakamura, T.
    RELIABILITY AND MATERIALS ISSUES OF SEMICONDUCTOR OPTICAL AND ELECTRICAL DEVICES AND MATERIALS, 2010, 1195
  • [40] Transient characteristics of a 1.8 kV, 3.8 A 4H-SiC bipolar junction transistor
    Ivanov, PA
    Levinshtein, ME
    Agarwal, AK
    Palmour, JW
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2001, 16 (06) : 521 - 525
12345