A Simulation of DC and AC performance of 4H-SiC Tunneling Emitter Bipolar Transistor (TEBT)

被引：0
|
作者：
Liu, Jing [1 ]
Zhang, Yuming [1 ]
Zhang, Yimen [1 ]
机构：
[1] Xidian Univ, Sch Microelect, Key Lab Wide Band Gap Semicond Mat & Devices, Xian, Peoples R China
来源：
2009 IEEE INTERNATIONAL CONFERENCE OF ELECTRON DEVICES AND SOLID-STATE CIRCUITS (EDSSC 2009) | 2009年
关键词：
4H-SiC; tunneling emitter; bipolar transistor;
D O I：
10.1109/FSKD.2009.167
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A novel HBT structure, Tunneling Emitter Bipolar Transistor (TEBT), is proposed in this paper. The DC and AC small-signal characteristics of the TEBT are simulated. The DC gain of the proposed structure is 45. To get better AC performance, the structure is modified, reducing the thickness of collector and enhancing the doping of base. the characteristic frequency (f(T)) is 2.6 GHz, the maximum oscillating frequency (f(max)) is 67.0 GHz and the corresponding power gain can reach 32.
引用
收藏
页码：326 / +
页数：2
相关论文
共 50 条
  • [21] Novel power Si/4H-SiC heterojunction tunneling transistor (HETT)
    Hayashi, Tetsuya
    Shimoida, Yoshio
    Tanaka, Hideaki
    Yamagami, Shigeharu
    Tanimoto, Satoshi
    Hoshi, Masakatsu
    SILICON CARBIDE AND RELATED MATERIALS 2005, PTS 1 AND 2, 2006, 527-529 : 1453 - +
  • [22] 4H-SiC bipolar junction transistor with high current and power density
    Perez-Wurfl, I
    Krutsinger, R
    Torvik, JT
    Van Zeghbroeck, B
    SOLID-STATE ELECTRONICS, 2003, 47 (02) : 229 - 231
  • [23] Demonstration of first 9.2 kV 4H-SiC bipolar junction transistor
    Zhang, J
    Zhao, JH
    Alexandrov, P
    Burke, T
    ELECTRONICS LETTERS, 2004, 40 (21) : 1381 - 1383
  • [24] High Performance 4H-SiC Emitter Coupled Logic Circuits
    Elgabra, Hazem
    Singh, Shakti
    2013 IEEE 20TH INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS (ICECS), 2013, : 104 - 105
  • [25] High Performance 4H-SiC Emitter Coupled Logic Circuits
    Singh, Shakti
    El Sayed, Nourhan
    Elgabra, Hazem
    ElBoshra, Tamador
    Wahbah, Maisam
    Al Zaabi, Mariam
    2013 IEEE 20TH INTERNATIONAL CONFERENCE ON ELECTRONICS, CIRCUITS, AND SYSTEMS (ICECS), 2013, : 703 - 706
  • [26] Improvement and analysis of implanted-emitter bipolar junction transistors in 4H-SiC
    Tang, Y
    Fedison, JB
    Chow, TP
    SILICON CARBIDE AND RELATED MATERIALS 2001, PTS 1 AND 2, PROCEEDINGS, 2002, 389-3 : 1329 - 1332
  • [27] Modeling the DC performance of heterostructure-emitter bipolar transistor
    Lour, Wen-Shiung
    Liu, Wen-Chau
    Guo, Der-Feng
    Liu, Rong-Chau
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 1992, 31 (08): : 2388 - 2393
  • [28] Modeling dc gain performance of 4H-SiC BJTs
    Fardi, Hamid Z.
    COMPEL-THE INTERNATIONAL JOURNAL FOR COMPUTATION AND MATHEMATICS IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2007, 26 (05) : 1236 - 1246
  • [29] Design and Simulation of a Novel Bipolar Digital Logic Technology for a Balanced Performance in 4H-SiC
    Elgabra, Hazem
    Siddiqui, Amna
    Singh, Shakti
    IEEE ELECTRON DEVICE LETTERS, 2016, 37 (03) : 257 - 260
  • [30] Analysis of the performances of a fully 4H-SiC insultated DC/AC converters
    Di Benedetto, Luigi
    Licciardo, Gian Domenico
    Rubino, Alfredo
    Lanzotti, Emilio
    Piccirilli, Eduardo
    2017 1ST IEEE INTERNATIONAL CONFERENCE ON ENVIRONMENT AND ELECTRICAL ENGINEERING AND 2017 17TH IEEE INDUSTRIAL AND COMMERCIAL POWER SYSTEMS EUROPE (EEEIC / I&CPS EUROPE), 2017,
12345