Beyond solid-state lighting: Miniaturization, hybrid integration, and applications of GaN nano- and micro-LEDs

被引:241
作者
Wasisto, Hutomo Suryo [1 ,2 ]
Prades, Joan Daniel [3 ]
Guelink, Jan [1 ,2 ]
Waag, Andreas [1 ,2 ]
机构
[1] Tech Univ Carolo Wilhelmina Braunschweig, Inst Semicond Technol IHT, Hans Sommer Str 66, D-38106 Braunschweig, Germany
[2] Tech Univ Carolo Wilhelmina Braunschweig, Lab Emerging Nanometrol LENA, Langer Kamp 6a, D-38106 Braunschweig, Germany
[3] Univ Barcelona, Dept Elect & Biomed Engn, MIND IN2UB, C Marti & Franques 1, E-08028 Barcelona, Spain
基金
欧洲研究理事会;
关键词
AIRBORNE NANOPARTICLE DETECTOR; EMITTING-DIODE-ARRAYS; VAPOR-PHASE EPITAXY; LASER LIFT-OFF; FLUORESCENCE LIFETIME; WIDE-FIELD; IN-VIVO; WHITE-LIGHT; OPTOGENETIC STIMULATION; PARTICULATE MATTER;
D O I
10.1063/1.5096322
中图分类号
O59 [应用物理学];
学科分类号
摘要
Gallium nitride (GaN) light-emitting-diode (LED) technology has been the revolution in modern lighting. In the last decade, a huge global market of efficient, long-lasting, and ubiquitous white light sources has developed around the inception of the Nobel-prize-winning blue GaN LEDs. Today, GaN optoelectronics is developing beyond solid-state lighting, leading to new and innovative devices, e.g., for microdisplays, being the core technology for future augmented reality and visualization, as well as point light sources for optical excitation in communications, imaging, and sensing. This explosion of applications is driven by two main directions: the ability to produce very small GaN LEDs (micro-LEDs and nano-LEDs) with high efficiency and across large areas, in combination with the possibility to merge optoelectronic-grade GaN micro-LEDs with silicon microelectronics in a hybrid approach. GaN LED technology is now even spreading into the realm of display technology, which has been occupied by organic LEDs and liquid crystal displays for decades. In this review, the technological transition toward GaN micro- and nanodevices beyond lighting is discussed including an up-to-date overview on the state of the art. (C) 2019 Author(s).
引用
收藏
页数:40
相关论文
共 468 条
[1]  
Abaya T V F, 2012, Biomed Opt Express, V3, P3087, DOI 10.1364/BOE.3.003087
[2]   Fast fully-integrated front-end circuit to overcome pile-up limits in time-correlated single photon counting with single photon avalanche diodes [J].
Acconcia, Giulia ;
Cominelli, Alessandro ;
Ghioni, Massimo ;
Rech, Ivan .
OPTICS EXPRESS, 2018, 26 (12) :15398-15410
[3]   Multitarget magnetic activated cell sorter [J].
Adams, Jonathan D. ;
Kim, Unyoung ;
Soh, H. Tom .
PROCEEDINGS OF THE NATIONAL ACADEMY OF SCIENCES OF THE UNITED STATES OF AMERICA, 2008, 105 (47) :18165-18170
[4]   High-power deep ultraviolet light-emitting diodes based on a micro-pixel design [J].
Adivarahan, V ;
Wu, S ;
Sun, WH ;
Mandavilli, V ;
Shatalov, MS ;
Simin, G ;
Yang, JW ;
Maruska, HP ;
Khan, MA .
APPLIED PHYSICS LETTERS, 2004, 85 (10) :1838-1840
[5]   A Processing Platform for Optoelectronic/Optogenetic Retinal Prosthesis [J].
Al-Atabany, Walid ;
McGovern, Brian ;
Mehran, Kamyar ;
Berlinguer-Palmini, Rolando ;
Degenaar, Patrick .
IEEE TRANSACTIONS ON BIOMEDICAL ENGINEERING, 2013, 60 (03) :781-791
[6]   Process Optimization of GaN Nanorods Fabricated Using CH4/H2/SF6 Inductively Coupled Plasma Etch Technology [J].
Al-Suleiman, M. A. M. ;
Al-Hadeethi, Y. ;
Waag, A. .
SCIENCE OF ADVANCED MATERIALS, 2015, 7 (12) :2523-2527
[7]   P-TYPE CONDUCTION IN MG-DOPED GAN TREATED WITH LOW-ENERGY ELECTRON-BEAM IRRADIATION (LEEBI) [J].
AMANO, H ;
KITO, M ;
HIRAMATSU, K ;
AKASAKI, I .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (12) :L2112-L2114
[8]  
Amano H., 2015, Handbook of Crystal Growth, P683, DOI DOI 10.1016/B978-0-444-63304-0.00016-0
[9]  
[Anonymous], SENSORS
[10]  
[Anonymous], 2018, IEEE J SEL TOP QUANT