Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

被引：30
作者：
Borg, B. Mattias
Ek, Martin
Ganjipour, Bahram
Dey, Anil W. [1 ]
Dick, Kimberly A.
Wernersson, Lars-Erik [1 ]
Thelander, Claes [1 ]
机构：
[1] Lund Univ, Dept Elect & Informat Technol, S-22100 Lund, Sweden
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期
基金：
瑞典研究理事会;
关键词：
III-V semiconductors - Threshold voltage - Heterojunctions - Indium arsenide - Nanowires - Gallium compounds - Antimony compounds;
D O I：
10.1063/1.4739082
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]
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页数：4
相关论文
共 14 条
[1]   Si-InAs heterojunction Esaki tunnel diodes with high current densities [J].
Bjork, M. T. ;
Schmid, H. ;
Bessire, C. D. ;
Moselund, K. E. ;
Ghoneim, H. ;
Karg, S. ;
Lortscher, E. ;
Riel, H. .
APPLIED PHYSICS LETTERS, 2010, 97 (16)
[2]   Diameter reduction of nanowire tunnel heterojunctions using in situ annealing [J].
Borg, B. Mattias ;
Ek, Martin ;
Dick, Kimberly A. ;
Ganjipour, Bahram ;
Dey, Anil W. ;
Thelander, Claes ;
Wernersson, Lars-Erik .
APPLIED PHYSICS LETTERS, 2011, 99 (20)
[3]   Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality [J].
Ek, Martin ;
Borg, B. Mattias ;
Dey, Anil W. ;
Ganjipour, Bahram ;
Thelander, Claes ;
Wernersson, Lars-Erik ;
Dick, Kimberly A. .
CRYSTAL GROWTH & DESIGN, 2011, 11 (10) :4588-4593
[4]   Patterned p-Doping of InAs Nanowires by Gas-Phase Surface Diffusion of Zn [J].
Ford, Alexandra C. ;
Chuang, Steven ;
Ho, Johnny C. ;
Chueh, Yu-Lun ;
Fan, Zhiyong ;
Javey, Ali .
NANO LETTERS, 2010, 10 (02) :509-513
[5]   High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires [J].
Ganjipour, Bahram ;
Dey, Anil W. ;
Borg, B. Mattias ;
Ek, Martin ;
Pistol, Mats-Erik ;
Dick, Kimberly A. ;
Wernersson, Lars-Erik ;
Thelander, Claes .
NANO LETTERS, 2011, 11 (10) :4222-4226
[6]   Optimizing Tunnel FET Performance - Impact of Device Structure, Transistor Dimensions and Choice of Material [J].
Knoch, Joachim .
PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, 2009, :45-46
[7]   On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors [J].
Koswatta, Siyuranga O. ;
Koester, Steven J. ;
Haensch, Wilfried .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (12) :3222-3230
[8]   AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 μA/μm at 0.5 V [J].
Li, Rui ;
Lu, Yeqing ;
Zhou, Guangle ;
Liu, Qingmin ;
Chae, Soo Doo ;
Vasen, Tim ;
Hwang, Wan Sik ;
Zhang, Qin ;
Fay, Patrick ;
Kosel, Tom ;
Wistey, Mark ;
Xing, Huili ;
Seabaugh, Alan .
IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) :363-365
[9]  
Mohata D. K., 2010, 2010 68th Annual Device Research Conference (DRC 2010), P103, DOI 10.1109/DRC.2010.5551856
[10]   NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE BASED ON RESONANT INTERBAND TUNNELING [J].
SODERSTROM, JR ;
CHOW, DH ;
MCGILL, TC .
APPLIED PHYSICS LETTERS, 1989, 55 (11) :1094-1096
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