Influence of doping on the electronic transport in GaSb/InAs(Sb) nanowire tunnel devices

被引：30
作者：
Borg, B. Mattias
Ek, Martin
Ganjipour, Bahram
Dey, Anil W. [1 ]
Dick, Kimberly A.
Wernersson, Lars-Erik [1 ]
Thelander, Claes [1 ]
机构：
[1] Lund Univ, Dept Elect & Informat Technol, S-22100 Lund, Sweden
来源：
APPLIED PHYSICS LETTERS | 2012年 / 101卷 / 04期
基金：
瑞典研究理事会;
关键词：
Diodes;
D O I：
10.1063/1.4739082
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The effect of various doping profiles on the electronic transport in GaSb/InAs(Sb) nanowire tunnel diodes is investigated. Zn-doping of the GaSb segment increases both the peak current density and the current level in reverse bias. Top-gated diodes exhibit peak current modulation with a threshold voltage which can be controlled by Zn-doping the InAs(Sb) segment. By intentionally n-doping the InAs(Sb) segment degenerate doping on both sides of the heterojunction can be achieved, as well as tunnel diodes with peak current of 420 kA/cm(2) at V-DS = 0.16V and a record-high current density of 3.6 MA/cm(2) at V-DS = -0.5V. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4739082]
引用
收藏
页数：4
相关论文
共 14 条
  • [1] Si-InAs heterojunction Esaki tunnel diodes with high current densities
    Bjork, M. T.
    Schmid, H.
    Bessire, C. D.
    Moselund, K. E.
    Ghoneim, H.
    Karg, S.
    Lortscher, E.
    Riel, H.
    [J]. APPLIED PHYSICS LETTERS, 2010, 97 (16)
  • [2] Diameter reduction of nanowire tunnel heterojunctions using in situ annealing
    Borg, B. Mattias
    Ek, Martin
    Dick, Kimberly A.
    Ganjipour, Bahram
    Dey, Anil W.
    Thelander, Claes
    Wernersson, Lars-Erik
    [J]. APPLIED PHYSICS LETTERS, 2011, 99 (20)
  • [3] Formation of the Axial Heterojunction in GaSb/InAs(Sb) Nanowires with High Crystal Quality
    Ek, Martin
    Borg, B. Mattias
    Dey, Anil W.
    Ganjipour, Bahram
    Thelander, Claes
    Wernersson, Lars-Erik
    Dick, Kimberly A.
    [J]. CRYSTAL GROWTH & DESIGN, 2011, 11 (10) : 4588 - 4593
  • [4] Patterned p-Doping of InAs Nanowires by Gas-Phase Surface Diffusion of Zn
    Ford, Alexandra C.
    Chuang, Steven
    Ho, Johnny C.
    Chueh, Yu-Lun
    Fan, Zhiyong
    Javey, Ali
    [J]. NANO LETTERS, 2010, 10 (02) : 509 - 513
  • [5] High Current Density Esaki Tunnel Diodes Based on GaSb-InAsSb Heterostructure Nanowires
    Ganjipour, Bahram
    Dey, Anil W.
    Borg, B. Mattias
    Ek, Martin
    Pistol, Mats-Erik
    Dick, Kimberly A.
    Wernersson, Lars-Erik
    Thelander, Claes
    [J]. NANO LETTERS, 2011, 11 (10) : 4222 - 4226
  • [6] Optimizing Tunnel FET Performance - Impact of Device Structure, Transistor Dimensions and Choice of Material
    Knoch, Joachim
    [J]. PROCEEDINGS OF TECHNICAL PROGRAM: 2009 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS, 2009, : 45 - 46
  • [7] On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors
    Koswatta, Siyuranga O.
    Koester, Steven J.
    Haensch, Wilfried
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 2010, 57 (12) : 3222 - 3230
  • [8] AlGaSb/InAs Tunnel Field-Effect Transistor With On-Current of 78 μA/μm at 0.5 V
    Li, Rui
    Lu, Yeqing
    Zhou, Guangle
    Liu, Qingmin
    Chae, Soo Doo
    Vasen, Tim
    Hwang, Wan Sik
    Zhang, Qin
    Fay, Patrick
    Kosel, Tom
    Wistey, Mark
    Xing, Huili
    Seabaugh, Alan
    [J]. IEEE ELECTRON DEVICE LETTERS, 2012, 33 (03) : 363 - 365
  • [9] Mohata D. K., 2010, 2010 68th Annual Device Research Conference (DRC 2010), P103, DOI 10.1109/DRC.2010.5551856
  • [10] NEW NEGATIVE DIFFERENTIAL RESISTANCE DEVICE BASED ON RESONANT INTERBAND TUNNELING
    SODERSTROM, JR
    CHOW, DH
    MCGILL, TC
    [J]. APPLIED PHYSICS LETTERS, 1989, 55 (11) : 1094 - 1096
12