Step coverage study of indium-tin-oxide thin films by spray CVD on non-flat substrates at different temperatures

被引:21
作者
Kondo, T. [1 ]
Sawada, Y. [1 ]
Akiyama, K. [2 ]
Funakubo, H. [3 ]
Kiguchi, T. [4 ]
Seki, S. [1 ]
Wang, M. H. [1 ]
Uchida, T. [1 ]
机构
[1] Tokyo Polytech Univ, Ctr Hyper Media Res, Grad Sch Engn, Kanagawa 2430297, Japan
[2] Kanagawa Ind Technol Ctr, Kanagawa 2430435, Japan
[3] Tokyo Inst Technol, Interdisciplinary Grad Sch Sci & Engn, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 2268502, Japan
[4] Tokyo Inst Technol, Ctr Adv Mat Anal, Meguro Ku, Tokyo 1528550, Japan
关键词
indium-tin-oxide; patterned substrates; step coverage; spray CVD;
D O I
10.1016/j.tsf.2007.10.040
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Tin-doped In2O3 (indium-tin-oxide) films were deposited on non-flat Si substrates using an original spray chemical vapor deposition (CVD) system. When the deposition temperature was 300-350 degrees C, ITO films covered all surfaces (top surface, side walls, and bottom; opening size was I gm) after being sprayed 50 times. The step coverage decreased as the number of spray increased because the opening size became smaller due to the layered ITO films, and it therefore became increasingly difficult to supply raw materials. The ITO films could not be deposited when the grooves narrowed to less than 0.18 mu m. The step coverage of ITO films clearly increased, although the deposition rate decreased due to the decreasing deposition temperature. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:5864 / 5867
页数:4
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