Three Operation Modes for Tb/s All-Optical Switching With Intersubband Transitions in InGaAs/AlAs/AlAsSb Quantum Wells

被引：8

作者：

Fedoryshyn, Yuriy ^{[1
]}

Ma, Ping ^{[1
]}

Faist, Jerome ^{[2
]}

Kaspar, Peter ^{[1
]}

Kappeler, Roman ^{[1
]}

Beck, Mattias ^{[2
]}

Holzman, Jonathan F. ^{[3
]}

Jaeckel, Heinz ^{[1
]}

机构：

[1] ETH, Elect Lab, CH-8092 Zurich, Switzerland

[2] ETH, Inst Quantum Elect, CH-8093 Zurich, Switzerland

[3] Univ British Columbia Okanagan, Integrated Opt Lab, Sch Engn, Kelowna, BC V1V 1V7, Canada

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2012年 / 48卷 / 07期

关键词：

All-optical switching; intersubband transitions; quantum wells; ridge waveguides; ABSORPTION; SATURATION; ENERGY;

D O I：

10.1109/JQE.2012.2193558

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report on ultra-fast intersubband transitions in strained coupled double InGaAs/AlAs/AlAsSb quantum wells in terms of modeling, fabrication, and characterization of the structures. Our experimental results demonstrate the capability of the studied structures to perform Tb/s all-optical switching in the telecommunication wavelength range employing exclusively intersubband transitions. The coupled double quantum wells embedded into a ridge-waveguide can be explored as an inline single-wavelength all-optical switch at 1430 or 1730 nm, with response times of 400fs and 2 ps, respectively. These structures can also be operated in a dual-wavelength mode, which allows a straightforward separation of signal pulses at 1730 nm from control pulses at 1430 nm by relaxed spectral filtering at the output of the device.

引用

页码：885 / 890

页数：6

共 14 条

[1] Ultrafast all-optical switching based on cross modulation utilizing intersubband transitions in InGaAs/AlAs/AlAsSb coupled quantum wells with DFB grating waveguides
Ma, Ping
Fedoryshyn, Yuriy
Jaeckel, Heinz
OPTICS EXPRESS, 2011, 19 (10): : 9461 - 9474
[2] Ultrafast all-optical switching and demultiplexing using intersubband transitions in InGaAs/AlAsSb quantum well structures
Yoshida, H
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Dawlaty, JM
Rana, F
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NANOPHOTONICS FOR COMMUNICATION: MATERIALS AND DEVICES, 2004, 5597 : 56 - 61
[4] Modeling of ultrafast recovery times and saturation intensities of the intersubband absorption in InGaAs/AlAs/AlAsSb coupled double quantum wells
Ma, Ping
Fedoryshyn, Yuriy
Jaeckel, Heinz
ACTIVE PHOTONIC MATERIALS IV, 2011, 8095
[5] Intersubband transitions and ultrafast all-optical modulation using multiple InGaAs-AlAsSb-InP coupled double-quantum-well structures
Neogi, A
Yoshida, H
Mozume, T
Georgiev, N
Wada, O
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2001, 7 (04) : 710 - 717
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JOURNAL OF APPLIED PHYSICS, 2010, 107 (10)
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IEICE TRANSACTIONS ON ELECTRONICS, 2009, E92C (02) : 187 - 193
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OPTICAL DEVICES FOR FIBER COMMUNICATION III, 2002, 4638 : 90 - 98
[9] All-optical switch utilizing intersubband transition in GaN quantum wells
Iizuka, Norio
Kaneko, Kei
Suzuki, Nobuo
IEEE JOURNAL OF QUANTUM ELECTRONICS, 2006, 42 (7-8) : 765 - 771
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Nah, Jongbum
LiKamWa, Patrick
ENABLING PHOTONICS TECHNOLOGIES FOR DEFENSE, SECURITY, AND AEROSPACE APPLICATIONS II, 2006, 6243

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