Anomalous thermoelectricity in strained Bi2Te3 films

被引:13
作者
Liu, Yucong [1 ,2 ]
Chen, Jiadong [1 ,3 ]
Deng, Huiyong [1 ]
Hu, Gujin [1 ]
Zhu, Daming [4 ]
Dai, Ning [1 ,5 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Tech Phys, Natl Lab Infrared Phys, Shanghai 200083, Peoples R China
[2] Univ Chinese Acad Sci, Beijing 100049, Peoples R China
[3] Changzhou Inst Optoelect Technol, Changzhou 213164, Peoples R China
[4] Univ Missouri Kansas City, Dept Phys, Kansas City, MO 64110 USA
[5] Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Changzhou 213164, Peoples R China
来源
SCIENTIFIC REPORTS | 2016年 / 6卷
基金
中国国家自然科学基金; 上海市自然科学基金;
关键词
BISMUTH TELLURIDE; ELECTRICAL-RESISTIVITY; PIEZOELECTRICITY; POWER; PERFORMANCE; GROWTH;
D O I
10.1038/srep32661
中图分类号
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号
07 ; 0710 ; 09 ;
摘要
Bi2Te3-based alloys have been intensively used for thermoelectric coolers and generators due to their high Seebeck coefficient S. So far, efforts to improve the S have been made mostly on changing the structures and components. Herein, we demonstrate an anomalous thermoelectricity in strained Bi2Te3 films, i.e., the value of S is obviously changed after reversing the direction of temperature gradient. Further theoretical and experimental analysis shows that it originates from the coupling of thermoelectric and flexoelectric effects caused by a stress gradient. Our finding provides a new avenue to adjust the S of Bi2Te3-based thermoelectric materials through flexoelectric polarization.
引用
收藏
页数:7
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