The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration

被引：12

作者：

Marquardt, B. ^{[1
,2
]}

Beckel, A. ^{[1
,2
]}

Lorke, A. ^{[1
,2
]}

Wieck, A. D. ^{[3
]}

Reuter, D. ^{[3
]}

Geller, M. ^{[1
,2
]}

机构：

[1] Univ Duisburg Essen, Fak Phys, D-47048 Duisburg, Germany

[2] Univ Duisburg, CeNIDE, D-47048 Duisburg, Germany

[3] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany

来源：

APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 22期

关键词：

carrier density; carrier mobility; electrical conductivity; III-V semiconductors; indium compounds; self-assembly; semiconductor quantum dots; time resolved spectra; two-dimensional electron gas; CONTROLLABLE SCATTERING CENTERS; MODULATION; VICINITY; SPIN;

D O I：

10.1063/1.3665070

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Using time-resolved transport spectroscopy, we investigate the influence of charge-tunable InAs quantum dots (QDs) on the conductance of a nearby two-dimensional electron gas (2DEG). Loading successively electrons into the self-assembled QDs decreases the carrier concentration and mobility in the 2DEG. We are able to quantify how these transport properties change for each additional charge in the s- or p-shell. It is found that mobility and carrier concentration contribute equally to the overall change in conductance. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665070]

引用

页数：3

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