The influence of charged InAs quantum dots on the conductance of a two-dimensional electron gas: Mobility vs. carrier concentration

被引：12
作者：
Marquardt, B. [1 ,2 ]
Beckel, A. [1 ,2 ]
Lorke, A. [1 ,2 ]
Wieck, A. D. [3 ]
Reuter, D. [3 ]
Geller, M. [1 ,2 ]
机构：
[1] Univ Duisburg Essen, Fak Phys, D-47048 Duisburg, Germany
[2] Univ Duisburg, CeNIDE, D-47048 Duisburg, Germany
[3] Ruhr Univ Bochum, Lehrstuhl Angew Festkorperphys, D-44780 Bochum, Germany
来源：
APPLIED PHYSICS LETTERS | 2011年 / 99卷 / 22期
关键词：
carrier density; carrier mobility; electrical conductivity; III-V semiconductors; indium compounds; self-assembly; semiconductor quantum dots; time resolved spectra; two-dimensional electron gas; CONTROLLABLE SCATTERING CENTERS; MODULATION; VICINITY; SPIN;
D O I：
10.1063/1.3665070
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Using time-resolved transport spectroscopy, we investigate the influence of charge-tunable InAs quantum dots (QDs) on the conductance of a nearby two-dimensional electron gas (2DEG). Loading successively electrons into the self-assembled QDs decreases the carrier concentration and mobility in the 2DEG. We are able to quantify how these transport properties change for each additional charge in the s- or p-shell. It is found that mobility and carrier concentration contribute equally to the overall change in conductance. (C) 2011 American Institute of Physics. [doi:10.1063/1.3665070]
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页数：3
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