Photocatalytic and Photoelectrocatalytic Water Splitting by Porous g-C3N4 Nanosheets for Hydrogen Generation

被引:84
作者
Mehtab, Amir [1 ,2 ]
Alshehri, Saad M. [3 ]
Ahmad, Tokeer [1 ]
机构
[1] Jamia Millia Islamia, Dept Chem, Nanochem Lab, New Delhi 110025, India
[2] Texas A&M Univ, Dept Chem, College Stn, TX 77843 USA
[3] King Saud Univ, Coll Sci, Dept Chem, Riyadh 11451, Saudi Arabia
关键词
g-C; 3; N; 4; photocatalysis; photoelectrocatalysis; hydrogen generation; sacrificial agents; apparent quantum yield; Faradaic efficiency; SOLAR-ENERGY CONVERSION; EVOLUTION; OXIDATION;
D O I
10.1021/acsanm.2c02460
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
electrochemical water splitting is an ultimate source of hydrogen generation for tackling the ongoing fuel crisis. In this context, we nontoxic semiconductor through the polycondensation method. In the present work, we have discussed the major changes in the morphology of g-C3N4 after acidic exfoliation thoroughly by using transmission electron microscopy (TEM) and scanning electron microscopy (SEM) studies. The chemical purity of the assynthesized materials was analyzed by using powder X-ray diffraction (PXRD). The specific surface area and porosity of the materials were obtained through Brunner-Emmet-Teller (BET) surface area studies. Besides this, the electronic structure of g-C3N4 was discussed through X-ray absorption near-edge spectroscopy (XANES), and the elemental composition was determined by using X-ray photoelectron spectroscopy (XPS). Moreover, the dependency of the sacrificial agents of g-C3N4 was discussed in detail by using sodium sulfide/sodium sulfite (Na2S/Na2SO3) and triethanolamine (TEOA). It was observed that exfoliated g-C3N4 shows remarkable hydrogen evolution in the presence of TEOA and an efficient quantum yield up to 12%, which is 1.7-fold higher than in the presence of Na2S/Na2SO3 (7%). Furthermore, to harness most of the solar light spectrum, a high current density and improved Faradaic efficiency during the photoelectrocatalysis have been reported.
引用
收藏
页码:12656 / 12665
页数:10
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